Electronic Structure of InAsx P1-x /InP Strained Quantum Wires
HE Guo-min, LI Kai-hang, WANG Ren-zhi, ZHENG Yong-mei
Department of Physics, Xiamen University, Xiamen 361005
Electronic Structure of InAsx P1-x /InP Strained Quantum Wires
HE Guo-min;LI Kai-hang;WANG Ren-zhi;ZHENG Yong-mei
Department of Physics, Xiamen University, Xiamen 361005
关键词 ：
71.55.Eq ,
71.70.-d ,
73.20.Dx
Abstract ： The electronic structure of InAs0.25 P0.75 /InP strained quantum wires grown on InP(001) oriented substrates is studied within the framework of effective-mass envelope-function theory. At the Γ point, the electron and valence subband energy levels with and without spin-split-off band, and the absorption spectra are calculated. The effects of strain and spin-split-off band on valence energy levels are presented. The results show that the uppermost valence subband is almost unaffected by the strain induced coupling between the heavy- and light-hole bands and the spin-split-off bands while the other subbands are more markedly affected in the InAs0.25 P0.75 /InP strained quantum wires.
Key words ：
71.55.Eq
71.70.-d
73.20.Dx
出版日期: 1998-08-01
引用本文:
HE Guo-min;LI Kai-hang;WANG Ren-zhi;ZHENG Yong-mei. Electronic Structure of InAsx P1-x /InP Strained Quantum Wires[J]. 中国物理快报, 1998, 15(8): 594-596.
x P1-x /InP Strained Quantum Wires. Chin. Phys. Lett., 1998, 15(8): 594-596.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1998/V15/I8/594
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