AIN:TbF3 Electroluminescence Thin Film Prepared by Radio-Frequency Magnetron Sputtering
ZHAO Yan-li, ZHONG Guo-zhu, FAN Xi-wu, LI Chang-hua
Changchun Institute of Physics and Laboratory of Excited States Processes, Chinese Academy of Sciences, Changchun 130021
AIN:TbF3 Electroluminescence Thin Film Prepared by Radio-Frequency Magnetron Sputtering
ZHAO Yan-li;ZHONG Guo-zhu;FAN Xi-wu;LI Chang-hua
Changchun Institute of Physics and Laboratory of Excited States Processes, Chinese Academy of Sciences, Changchun 130021
关键词 ：
78.60.Fi
Abstract ： High quality AlN thin films doped with TbF3 were prepared by rf magnetron reaction sputtering. High purity AI metal and TbF3 were used as target materials with N2 and Ar as sputtering gases. The influence of preparation conditions on the photoluminescence brightness was studied, and the electroluminescence was found to have a similar dependence on the concentration of TbF3 and substrate temperature. The characteristic emission of Tb3+ ions was obtained in an AIN:TbF3 alternating current thin film electroluminescence device prepared with 600°C substrate temperature and 4.0mol% concentration of TbF3 .
Key words ：
78.60.Fi
出版日期: 1999-11-01
引用本文:
ZHAO Yan-li;ZHONG Guo-zhu;FAN Xi-wu;LI Chang-hua. AIN:TbF3 Electroluminescence Thin Film Prepared by Radio-Frequency Magnetron Sputtering[J]. 中国物理快报, 1999, 16(11): 841-843.
3 Electroluminescence Thin Film Prepared by Radio-Frequency Magnetron Sputtering. Chin. Phys. Lett., 1999, 16(11): 841-843.
链接本文:
https://cpl.iphy.ac.cn/CN/
或
https://cpl.iphy.ac.cn/CN/Y1999/V16/I11/841
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1999, Vol. 16 
