Realizing n-Type GeTe through Suppressing the Formation of Cation Vacancies and Bi-Doping
Min Zhang , Chaoliang Hu , Qi Zhang , Feng Liu , Shen Han , Chenguang Fu , and Tiejun Zhu*
School of Materials Science and Engineering, and State Key Laboratory of Silicon Materials, Zhejiang University, Zhejiang 310027, China
Abstract ：It is known that p-type GeTe-based materials show excellent thermoelectric performance due to the favorable electronic band structure. However, n-type doping in GeTe is of challenge owing to the native Ge vacancies and high hole concentration of about $10^{21}$ cm$^{-3}$. In the present work, the formation energy of cation vacancies of GeTe is increased through alloying PbSe, and further Bi-doping enables the change of carrier conduction from p-type to n-type. As a result, the n-type thermoelectric performance is obtained in GeTe-based materials. A peak $zT$ of 0.34 at 525 K is obtained for (Ge$_{0.6}$Pb$_{0.4})_{0.88}$Bi$_{0.12}$Te$_{0.6}$Se$_{0.4}$. These results highlight the realization of n-type doping in GeTe and pave the way for further optimization of the thermoelectric performance of n-type GeTe.
收稿日期: 2021-08-28
出版日期: 2021-11-18
:
81.05.Hd
(Other semiconductors)
84.60.Rb
(Thermoelectric, electrogasdynamic and other direct energy conversion)
72.20.Pa
(Thermoelectric and thermomagnetic effects)
61.72.jd
(Vacancies)
引用本文:
. [J]. 中国物理快报, 2021, 38(12): 127201-.
链接本文:
https://cpl.iphy.ac.cn/CN/10.1088/0256-307X/38/12/127201
或
https://cpl.iphy.ac.cn/CN/Y2021/V38/I12/127201
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