Electrical Response of Flexible Vanadyl-Phthalocyanine Thin-Film Transistors under Bending Conditions
WANG He 1,2, LI Chun-Hong1, WANG Li-Juan1, WANG Hai-Bo1, YAN Dong-Hang1
1State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 1300222Graduate School of Chinese Academy of Sciences, Beijing 100049
Electrical Response of Flexible Vanadyl-Phthalocyanine Thin-Film Transistors under Bending Conditions
WANG He 1,2, LI Chun-Hong1, WANG Li-Juan1, WANG Hai-Bo1, YAN Dong-Hang1
1State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 1300222Graduate School of Chinese Academy of Sciences, Beijing 100049
摘要Flexible vanadyl-phthalocyanine (VOPc) thin-film transistors are fabricated by the weak epitaxy growth (WEG) method. The devices show a mobility of 0.5 cm2/Vs, an on/off ratio of 105 and a low leakage current of 10-9 A. The performances exhibit strong dependence on bending conditions and reversible change can be found when the bending strain is less than 1.5%. This results from the change of the trap density calculated by subthreshold slopes. The results indicate that VOPc films fabricated by the WEG method have good durability to flexing and possess great potential in flexible electronics.
Abstract:Flexible vanadyl-phthalocyanine (VOPc) thin-film transistors are fabricated by the weak epitaxy growth (WEG) method. The devices show a mobility of 0.5 cm2/Vs, an on/off ratio of 105 and a low leakage current of 10-9 A. The performances exhibit strong dependence on bending conditions and reversible change can be found when the bending strain is less than 1.5%. This results from the change of the trap density calculated by subthreshold slopes. The results indicate that VOPc films fabricated by the WEG method have good durability to flexing and possess great potential in flexible electronics.
WANG He;LI Chun-Hong;WANG Li-Juan;WANG Hai-Bo;YAN Dong-Hang. Electrical Response of Flexible Vanadyl-Phthalocyanine Thin-Film Transistors under Bending Conditions[J]. 中国物理快报, 2010, 27(2): 28502-028502.
WANG He, LI Chun-Hong, WANG Li-Juan, WANG Hai-Bo, YAN Dong-Hang. Electrical Response of Flexible Vanadyl-Phthalocyanine Thin-Film Transistors under Bending Conditions. Chin. Phys. Lett., 2010, 27(2): 28502-028502.
[1] Horowitz G 1998 Adv. Mater. 10 365 [2] Dimitrakopoulos C D and Malenfant P R L 2002 Adv. Mater. 14 99 [3] Bao Z, Lovinger A J and Dodabalapur A 1996 Appl. Phys. Lett. 69 3066 [4] Bao Z A, Lovinger A J and Brown J 1998 J. Am. Chem. Soc. 120 207 [5] Wang H B, Zhu F, Yang J L, Geng Y H and Yan D H 2007 Adv. Mater. 19 2168 [6] Yang J L and Yan D H 2009 Chem. Soc. Rev. 28 2634 [7] Wang H, Song D, Yang J, Yu B, Geng Y and Yan D 2007 Appl. Phys. Lett. 90 253510 [8] Wang L, Liu G, Wang H, Song D, Yu B and Yan D 2007 Appl. Phys. Lett. 91 153508 [9] Rogers J A, Bao Z, Baldwin K, Dodabalapur A, Crone B, Raju V R, Kuck V, Katz H, Amundson K, Ewing J and Drzaic P 2001 Proc. Natl. Acad. Sci. U.S.A. 98 4835 [10] Gelinck G H, Huitema H E A, Van Veenendaal E, Cantatore E, Schrijnemakers L, Van der Putten J, Geuns T C T, Beenhakkers M, Giesbers J B, Huisman B H, Meijer E J, Benito E M, Touwslager F J, Marsman A W, Van Rens B J E and De Leeuw D M 2004 Nature Mater. 3 106 [11] Yagi I, Hirai N, Miyamoto Y, Noda M, Imaoka A, Yoneya N, Nomoto K, Kasahara J, Yumoto A and Urabe T 2007 J. Soc. Inf. Display 16 15 [12] Sekitani T, Kato Y, Iba S, Shinaoka H, Someya T, Sakurai T and Takagi S 2005 Appl. Phys. Lett. 86 073511 [13] Sekitani T, Iba S, Kato Y, Noguchi Y, Someya T and Sakurai T 2005 Appl. Phys. Lett. 87 173502 [14] Watanabe Y, Iechi H and Kudo K 2006 Appl. Phys. Lett. 89 233509 [15] Briseno A L, Tseng R J, Ling M M, Talcao E H L, Yang Y, Wudl F and Bao Z N 2006 Adv. Mater. 18 2320 [16] Wang Z Y, Kuang L and Gao J P 2003 US Patent 6534250 [17] Park S Y, Park M and Lee H H 2004 Appl. Phys. Lett. 85 2283 [18] Facchetti A, Yoon M H and Marks T J 2005 Adv. Mater. 17 1705 [19] Wang W, Shi J W, Guo S X, Zhang H M, Quan B F and Ma D G 2006 Chin. Phys. Lett. 23 3108 [20] Yu S Y, Xu S A and Ma D G 2007 Chin. Phys. Lett. 24 3513 [21] Wang H, Li C H, Pan F, Wang H B and Yan D H 2009 Chin. Phys. Lett. 26 118501 [22] Suo Z, Ma E Y, Gleskova H and Wagner S 1999 Appl. Phys. Lett 74 1177 [23] Gleskova H, Wagner S and Suo Z 1999 Appl. Phys. Lett. 75 3011 [24] Menard E, Nuzzo R G and Rogers J A 2005 Appl. Phys. Lett. 86 093507 [25] Sze S M 1981 Physics of Semiconductor Devices 2nd edn (New York: Wiley) [26] McDowell M, Hill I G, McDermott J E, Bernasek S L and Schwartz J 2006 Appl. Phys. Lett. 88 073505 [27] Knipp D, Street R A and Volkel A R 2003 Appl. Phys. Lett. 82 3907 [28] Dodabalapur A, Torsi L and Katz H E 1995 Science 268 270 [29] Horowitz G 2004 J. Mater. Res. 19 1946 [30] Lacour S P, Wagner S, Huang Z and Suo Z 2003 Appl. Phys. Lett. 82 2404