Fast Homoepitaxial Growth of 4H-SiC Films on 4° off-Axis Substrates in a SiH4-C2H4-H2 System
LIU Bin1, SUN Guo-Sheng1,2, LIU Xing-Fang1**, ZHANG Feng1, DONG Lin1, ZHENG Liu1, YAN Guo-Guo1, LIU Sheng-Bei1, ZHAO Wan-Shun1, WANG Lei1, ZENG Yi-Ping1, LI Xi-Guang2, WANG Zhan-Guo1, YANG Fei3
1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 2Dongguan Tianyu Semiconductor, Inc., Dongguan 523000 3State Grid Smart Grid Research Institute, Beijing 100192
Abstract：Homoepitaxial growth of 4H-SiC epilayers is conducted in a SiH4-C2H4-H2 system by low pressure hot-wall vertical chemical vapor deposition (CVD). Thick epilayers of 45 μm are achieved at a high growth rate up to 26 μm/h under an optimized growth condition, and are characterized by using a Normaski optical microscope, a scanning electronic microscope (SEM), an atomic force microscope (AFM) and an x-ray diffractometer (XRD), indicating good crystalline quality with mirror-like smooth surfaces and an rms roughness of 0.9 nm in a 5 μm × 5μm area. The dependence of the 4H-SiC growth rate on growth conditions on 4° off-axis 4H-SiC substrates and its mechanism are investigated. It is found that the H2 flow rate could influence the surface roughness, while good surface morphologies without Si droplets and epitaxial defects such as triangular defects could be obtained by increasing temperature.
. [J]. 中国物理快报, 2013, 30(12): 128101-128101.
LIU Bin, SUN Guo-Sheng, LIU Xing-Fang, ZHANG Feng, DONG Lin, ZHENG Liu, YAN Guo-Guo, LIU Sheng-Bei, ZHAO Wan-Shun, WANG Lei, ZENG Yi-Ping, LI Xi-Guang, WANG Zhan-Guo, YANG Fei. Fast Homoepitaxial Growth of 4H-SiC Films on 4° off-Axis Substrates in a SiH4-C2H4-H2 System. Chin. Phys. Lett., 2013, 30(12): 128101-128101.
2013, Vol. 30 
