摘要The black cubic boron nitride (cBN) single crystal is synthesized by using hBN-LiH and hBN-Li3N−B as the raw materials at high temperature and high pressure (HTHP). The colors of the cBN crystal synthesized in an hBN-Li3N−B system vary from transparent yellow, half-transparent and then opaque black with the increasing B content in the raw materials. It is worth noting that a trigonal shadow is presented at the center of the cBN crystal synthesized in the hBN-Li3N-B system but can not be found in the hBN-LiH system. Analyzing the Raman spectrum, we find that the darkening and the trigonal shadow in the cBN crystal may be due to the presence of excess B atoms. The above-mentioned phenomenon can be determined by removing impurity capacity and growth environment of the cBN crystal.
Abstract:The black cubic boron nitride (cBN) single crystal is synthesized by using hBN-LiH and hBN-Li3N−B as the raw materials at high temperature and high pressure (HTHP). The colors of the cBN crystal synthesized in an hBN-Li3N−B system vary from transparent yellow, half-transparent and then opaque black with the increasing B content in the raw materials. It is worth noting that a trigonal shadow is presented at the center of the cBN crystal synthesized in the hBN-Li3N-B system but can not be found in the hBN-LiH system. Analyzing the Raman spectrum, we find that the darkening and the trigonal shadow in the cBN crystal may be due to the presence of excess B atoms. The above-mentioned phenomenon can be determined by removing impurity capacity and growth environment of the cBN crystal.
(State selected dynamics and product distribution)
引用本文:
JI Xiao-Rui**, YANG Xiao-Hong. Removing Impurity of cBN Crystal Prepared at High Pressure and High Temperature[J]. 中国物理快报, 2012, 29(3): 38101-038101.
JI Xiao-Rui, YANG Xiao-Hong. Removing Impurity of cBN Crystal Prepared at High Pressure and High Temperature. Chin. Phys. Lett., 2012, 29(3): 38101-038101.
[1] Wentorf R H 1957 Chem. Phys. 26 956
[2] Ji X R, Su Z P, Yang D P and Zhang T C 2008 Mater. Lett. 62 1721
[3] Sachdev H 2003 Diamond Relat. Mater. 12 1275
[4] Du Y H, Su Z P, Yang D P, Yang X X, Ji X R, Gong X L and Zhang T C 2007 Mater. Lett. 61 3409
[5] Yang D P, Ji X R, Liu H S, Li Y A, Zhang T C and Zhu P W 2011 Diamond Relat. Mater. 20 174
[6] Taniguchi T and Yamaoka S 2001 Cryst. Growth 222 549
[7] Zhang J Q, Ma H A, Jiang Y P, Liang Z Z, Tian Y and Jia X 2007 Diamond Relat. Mater. 16 283
[8] Jayaprakash C, Rottman C, and Saam W F 1984 Phys. Rev. B 30 6549
[9] Liu Q X, Wang C X and Yang G W 2005 Phys. Rev. B 71 155422
[10] Solozhenko V L and Turkevich V Z 1997 Mater. Lett. 32 179
[11] Sachdev H and Strauß M 1999 Diamond Relat. Mater. 8 319