摘要Homo-epitaxial layers are successfully grown on Si-face 4° off−axis 4H-SiC substrates using the horizontal hot-wall chemical vapor deposition system. The smooth surface without morphological defects is obtained by the optimized in situ etching process and growth temperature. Schottky diodes fabricated on the epilayer present a typical I–V characteristic. This is the first report of Schottky diodes fabricated on 4° off-axis 4H-SiC substrates made in China.
Abstract：Homo-epitaxial layers are successfully grown on Si-face 4° off−axis 4H-SiC substrates using the horizontal hot-wall chemical vapor deposition system. The smooth surface without morphological defects is obtained by the optimized in situ etching process and growth temperature. Schottky diodes fabricated on the epilayer present a typical I–V characteristic. This is the first report of Schottky diodes fabricated on 4° off-axis 4H-SiC substrates made in China.
LI Zhe-Yang;**;HAN Ping;LI Yun;NI Wei-Jiang;BAO Hui-Qiang;LI Yu-Zhu
. Epitaxial Growth of 4H-SiC on 4° Off-Axis Substrate for Power Devices[J]. 中国物理快报, 2011, 28(9): 98101-098101.
LI Zhe-Yang, **, HAN Ping, LI Yun, NI Wei-Jiang, BAO Hui-Qiang, LI Yu-Zhu
. Epitaxial Growth of 4H-SiC on 4° Off-Axis Substrate for Power Devices. Chin. Phys. Lett., 2011, 28(9): 98101-098101.
[1] Baliga B J 1996 Physics of Semiconductor Power Devices (Somerset, KY: JWS Publishing)
[2] Treu M, Rupp R, Brunner H, Dahlquist F and Hecht C 2004 Mater. Sci. Forum. 981 457
[3] Kojima K, Kato T, Kuroda S, Okumura H and Arai K 2006 Mat. Sci. Forum 527-529 147
[4] Bergman J P, Lendenmann H, Nilsson P A, Lindefelt U and Skytt P 2001 Mater. Sci. Forum. 353-356 299
[5] Lendenmann H, Dahlquist F, Johansson N, Soderholm R, Nilsson P A, Bergman J P and Skytt P 2001 Mater. Sci. Forum 353-356 727
[6] Leone S, Pedersen H, Henry A, Kordina O and Janzén E 2009 J. Cryst. Growth 311 3265
[7] Zhang J, Forsberg U, Isacson M, Ellison A, Henry A, Kordina O and Janzén E 2002 J. Cryst. Growth 241 431
[8] Rupp R, Wiedenhofer A, Friedrichs P, Peters D, Schörner R and Stephani D 1998 Mater. Sci. Forum. 264-268 89
[9] Powell J A, Petit J B, Edgar J H, Jenkins I G, Matus LG, Yang J W, Pirouz P, Choyke W J, Clemen L and Yoganathan M 1991 Appl. Phys. Lett. 59 333
[10] Matsunami H and Kimoto T 1997 Mater. Sci. Eng. R 20 125
[11] Matsunami H and Kimoto T 1997 Diamond Relat. Mater. 6 1276
[12] Christian H, Bernd T and Wolfgang B 2006 Mater. Sci. Forum. 527-529 239
2011, Vol. 28 
