Electrically Tunable Wafer-Sized Three-Dimensional Topological Insulator Thin Films Grown by Magnetron Sputtering
Qixun Guo1, Yu Wu1, Longxiang Xu1, Yan Gong2, Yunbo Ou2, Yang Liu1, Leilei Li1, Yu Yan3**, Gang Han4, Dongwei Wang5, Lihua Wang6, Shibing Long7, Bowei Zhang8, Xun Cao8, Shanwu Yang4, Xuemin Wang4, Yizhong Huang8, Tao Liu9, Guanghua Yu1, Ke He2**, Jiao Teng1**
1Department of Material Physics and Chemistry, University of Science and Technology Beijing, Beijing 100083 2State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084 3Corrosion and Protection Center, Key Laboratory for Environmental Fracture (MOE), Institute of Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083 4Collaborative Innovation Center of Advanced Steel Technology, University of Science and Technology Beijing, Beijing 100083 5CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190 6Institute of Microstructure and Property of Advanced Materials, Beijing Key Lab of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100124 7School of Microelectronics, University of Science and Technology of China, Hefei 230026 8School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore 9Department of Physics, The Ohio State University, Columbus, Ohio 43210, USA
Abstract：Three-dimensional (3D) topological insulators (TIs) are candidate materials for various electronic and spintronic devices due to their strong spin-orbit coupling and unique surface electronic structure. Rapid, low-cost preparation of large-area TI thin films compatible with conventional semiconductor technology is the key to the practical applications of TIs. Here we show that wafer-sized Bi$_{2}$Te$_{3}$ family TI and magnetic TI films with decent quality and well-controlled composition and properties can be prepared on amorphous SiO$_{2}$/Si substrates by magnetron cosputtering. The SiO$_{2}$/Si substrates enable us to electrically tune (Bi$_{1-x}$Sb$_{x})_{2}$Te$_{3}$ and Cr-doped (Bi$_{1-x}$Sb$_{x})_{2}$Te$_{3}$ TI films between p-type and n-type behavior and thus study the phenomena associated with topological surface states, such as the quantum anomalous Hall effect (QAHE). This work significantly facilitates the fabrication of TI-based devices for electronic and spintronic applications.
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2020, Vol. 37 
