Polarization Induced High Al Composition AlGaN p–n Junction Grown on Silicon Substrates
ZHANG Peng1 , LI Shi-Bin1** , YU Hong-Ping1 , WU Zhi-Ming1 , CHEN Zhi1,2 , JIANG Ya-Dong1
1 State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 6100542 Department of Electrical & Computer Engineering, University of Kentucky, Lexington, KY 40506, USA
Abstract ：Wide bandgap AlGaN (x =0.7–1) p-n junction is realized on a silicon substrate through polarization induced doping. Polarization induced positive charge field is produced by linearly grading from AlN to Al0.7 Ga0.3 N, and negative charge field is generated by an inverted grading from Al0.7 Ga0.3 N to AlN. The polarization charge field induced hole density is on the order of 1018 cm?3 in the graded Alx 1?x N:Be (x =0.7–1) p-n junction. Polarization doping provides a feasible way to mass produce III-nitride devices on silicon substrates.
出版日期: 2014-11-28
:
81.15.-z
(Methods of deposition of films and coatings; film growth and epitaxy)
73.50.-h
(Electronic transport phenomena in thin films)
73.61.Ey
(III-V semiconductors)
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2014, Vol. 31 
