Chin. Phys. Lett.  2024, Vol. 41 Issue (3): 037102    DOI: 10.1088/0256-307X/41/3/037102
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Anisotropic Band Evolution of Bulk Black Phosphorus Induced by Uniaxial Tensile Strain
Yafeng Deng1, Yilin Zhang2, Yafei Zhao3*, Yongkang Xu1, Xingze Dai1, Shuanghai Wang1, Xianyang Lu1, Yao Li1, Yongbing Xu1*, and Liang He1*
1National Key Laboratory of Spin Chip and Technology, School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
2College of Optical and Electronic Technology, China Jiliang University, Hangzhou 310018, China
3School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471023, China
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Yafeng Deng, Yilin Zhang, Yafei Zhao et al  2024 Chin. Phys. Lett. 41 037102
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Abstract We investigate the anisotropic band structure and its evolution under tensile strains along different crystallographic directions in bulk black phosphorus (BP) using angle-resolved photoemission spectroscopy and density functional theory. The results show that there are band crossings in the Z–L (armchair) direction, but not in the Z–A (zigzag) direction. The corresponding dispersion-$k$ distributions near the valence band maximum (VBM) exhibit quasi-linear or quadratic relationships, respectively. Along the armchair direction, the tensile strain expands the interlayer spacing and shifts the VBM to deeper levels with a slope of $-16.2$ meV/% strain. Conversely, the tensile strain along the zigzag direction compresses the interlayer spacing and causes the VBM to shift towards shallower levels with a slope of 13.1 meV/% strain. This work demonstrates an effective method for band engineering of bulk BP by uniaxial tensile strain, elucidates the mechanism behind it, and paves the way for strain-regulated optoelectronic devices based on bulk BP.
Received: 21 December 2023      Published: 12 March 2024
PACS:  71.90.+q (Other topics in electronic structure)  
  71.20.Mq (Elemental semiconductors)  
  71.20.-b (Electron density of states and band structure of crystalline solids)  
  71.15.Mb (Density functional theory, local density approximation, gradient and other corrections)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/41/3/037102       OR      https://cpl.iphy.ac.cn/Y2024/V41/I3/037102
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Yafeng Deng
Yilin Zhang
Yafei Zhao
Yongkang Xu
Xingze Dai
Shuanghai Wang
Xianyang Lu
Yao Li
Yongbing Xu
and Liang He
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