| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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In Situ Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices |
| Dong Pan1,2†, Huading Song3,4†, Shan Zhang3†, Lei Liu1, Lianjun Wen1, Dunyuan Liao1, Ran Zhuo1, Zhichuan Wang5, Zitong Zhang3, Shuai Yang3,4, Jianghua Ying3,4, Wentao Miao3, Runan Shang4, Hao Zhang3,4,6*, and Jianhua Zhao1,2* |
1State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, China
2Center of Materials Science and Optoelectronics Engineering, and CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
3State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
4Beijing Academy of Quantum Information Sciences, Beijing 100193, China
5Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
6Frontier Science Center for Quantum Information, Beijing 100084, China
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| Cite this article: |
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Dong Pan, Huading Song, Shan Zhang et al 2022 Chin. Phys. Lett. 39 058101 |
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Abstract We demonstrate the in situ growth of ultra-thin InAs nanowires with an epitaxial Al film by molecular-beam epitaxy. Our InAs nanowire diameter ($\sim $30 nm) is much thinner than before ($\sim $100 nm). The ultra-thin InAs nanowires are pure phase crystals for various different growth directions. Transmission electron microscopy confirms an atomically abrupt and uniform interface between the Al shell and the InAs wire. Quantum transport study on these devices resolves a hard induced superconducting gap and 2$e$-periodic Coulomb blockade at zero magnetic field, a necessary step for future Majorana experiments. By reducing wire diameter, our work presents a promising route for reaching fewer sub-band regime in Majorana nanowire devices.
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Received: 18 March 2022
Express Letter
Published: 01 April 2022
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| PACS: |
81.05.Ea
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(III-V semiconductors)
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81.07.Gf
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(Nanowires)
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74.78.Na
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(Mesoscopic and nanoscale systems)
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73.63.-b
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(Electronic transport in nanoscale materials and structures)
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