| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Enhanced Anomalous Hall Effect of Pt on an Antiferromagnetic Insulator with Fully Compensated Surface |
| Yu Bai1,3†, Zhe Wang3†, Na Lei6†, Wisal Muhammad1,3, Lifeng Xiang1,3, Qiang Li1,3, Huilin Lai1,3, Yinyan Zhu1,2,4, Wenbing Wang1,2,4, Hangwen Guo1,2,4, Lifeng Yin1,2,3,4,5,8*, Ruqian Wu7*, and Jian Shen1,2,3,4,5,8* |
1State Key Laboratory of Surface Physics and Institute for Nanoelectronics Devices and Quantum Computing, Fudan University, Shanghai 200433, China
2Shanghai Qi Zhi Institute, Shanghai 200232, China
3Department of Physics, Fudan University, Shanghai 200433, China
4Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China
5Shanghai Research Center for Quantum Sciences, Shanghai 201315, China
6Fert Beijing Institute, BDBC, School of Electronic and Information Engineering, Beihang University, Beijing 100191, China
7Department of Physics and Astronomy, University of California, Irvine, California 92697, USA
8Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
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| Cite this article: |
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Yu Bai, Zhe Wang, Na Lei et al 2022 Chin. Phys. Lett. 39 108501 |
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Abstract We report a significantly enhanced anomalous Hall effect (AHE) of Pt on antiferromagnetic insulator thin film (3-unit-cell La$_{0.7}$Sr$_{0.3}$MnO$_{3}$, abbreviated as LSMO), which is one order of magnitude larger than that of Pt on other ferromagnetic (e.g. Y$_{3}$Fe$_{5}$O$_{12}$) and antiferromagnetic (e.g. Cr$_{2}$O$_{3}$) insulator thin films. Our experiments demonstrate that the antiferromagnetic La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ with fully compensated surface suppresses the positive anomalous Hall resistivity induced by the magnetic proximity effect and facilitates the negative anomalous Hall resistivity induced by the spin Hall effect. By changing the substrate's temperature during Pt deposition, we observed that the diffusion of Mn atoms into Pt layer can further enhance the AHE. The anomalous Hall resistivity increases with increasing temperature and persists even well above the Neel temperature ($T_{\rm N}$) of LSMO. The Monte Carlo simulations manifest that the unusual rise of anomalous Hall resistivity above $T_{\rm N}$ originates from the thermal induced magnetization in the antiferromagnetic insulator.
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Received: 01 August 2022
Editors' Suggestion
Published: 23 September 2022
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| PACS: |
73.50.Jt
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(Galvanomagnetic and other magnetotransport effects)
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72.15.Eb
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(Electrical and thermal conduction in crystalline metals and alloys)
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72.15.Gd
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(Galvanomagnetic and other magnetotransport effects)
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