| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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Polarity Reversal of Terahertz Electric Field from Heavily p-Doped Silicon Surfaces |
| Hai-Zhong Wu1†, Quan Guo2†, Yan-Yun Tu1, Zhi-Hui Lyu1, Xiao-Wei Wang1, Yong-Qiang Li1, Zhao-Yan Zhou1, Dong-Wen Zhang1*, Zeng-Xiu Zhao1, and Jian-Min Yuan1,3* |
1College of Liberal Arts and Sciences, National University of Defense Technology, Changsha 410073, China
2Northwest Institute of Nuclear Technology, Xi'an 710024, China
3Graduate School of China Academic of Engineering Physics, Beijing 100193, China
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| Cite this article: |
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Hai-Zhong Wu, Quan Guo, Yan-Yun Tu et al 2021 Chin. Phys. Lett. 38 074201 |
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Abstract Above-band-gap optical excitation of electron-hole pairs screens the doping-induced surface electric field and generates terahertz (THz) pulses via free-carrier transport. THz emission from a heavily doped silicon surface is much weaker than that of lightly doped samples. A polarity reversal of the THz electric field is observed in heavily doped p-type silicon, indicating that the doping related and carrier induced surface electric fields oppose each other. By comparing the penetration depth of the excitation laser with the thickness of the depletion layer for the doped silicon, it is shown that competition between diffusion and drift current causes the polarity reversal.
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Received: 01 April 2021
Published: 03 July 2021
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| Fund: Supported by the National Key Research and Development Program of China (Grant No. 2019YFA0307704), the NSAF Joint Fund (Grant No. U1830206), the Major Research Project of National Natural Science Foundation of China (Grant No. 91850201), and the National Natural Science Foundation of China (Grant Nos. 11974426, 11974425, 11874425, 11774428, and 12074431). |
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