| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Controllable Modulation to Quantum Well States on $\beta$-Sn Islands |
| Ze-Rui Wang1, Chen-Xiao Zhao1, Guan-Yong Wang1, Jin Qin1, Bing Xia1, Bo Yang1, Dan-dan Guan1,2*, Shi-Yong Wang1,2, Hao Zheng1,2, Yao-Yi Li1,2, Can-hua Liu1,2, and Jin-Feng Jia1,2* |
1Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
2Tsung-Dao Lee Institute, Shanghai 200240, China
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| Cite this article: |
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Ze-Rui Wang, Chen-Xiao Zhao, Guan-Yong Wang et al 2020 Chin. Phys. Lett. 37 096801 |
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Abstract We investigate the surface structure and electronic properties of $\beta$-Sn islands deposited on a graphitized 6H-SiC (0001) substrate via low temperature scanning tunneling microscopy and spectroscopy. Owing to the confinement of the island geometry, quantum well states (QWSs) are formed, manifesting as equidistant peaks in the tunneling spectra. Furthermore, a distinct strip feature appears on the surfaces of odd-layer Sn islands, ranging from 15–19 layers, which is not present on the surfaces of even-layer Sn islands. The spatial distribution of strips can be modified by applying a bias pulse, using an STM tip. Furthermore, the strip-like structure shows significant impacts on the QWS. An energy splitting of the lowest unoccupied QWSs is observed in strip regions; this may be ascribed to caused the phase shift of the wave functions of the QWSs on the top surface, due to surface distortions created by the aforementioned strips.
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Received: 04 July 2020
Published: 01 September 2020
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| PACS: |
68.37.Ef
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(Scanning tunneling microscopy (including chemistry induced with STM))
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68.60.Bs
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(Mechanical and acoustical properties)
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68.55.-a
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(Thin film structure and morphology)
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73.20.-r
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(Electron states at surfaces and interfaces)
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| Fund: Supported by the National Natural Science Foundation of China (Grant Nos. 11521404, 11634009, 11674222, 11674226, 11790313, 11574202, 11874256, U1632102, 11861161003 and 11874258), the National Key Research and Development Program of China (Grant Nos. 2016YFA0300403 and 2016YFA0301003), the Key Research Program of the Chinese Academy of Sciences (Grant No. XDPB08-2), the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB28000000), and the Shanghai Municipal Science and Technology Major Project (Grant No. 2019SHZDZX01). |
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