| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Giant-Capacitance-Induced Wide Quantum Hall Plateaus in Graphene on LaAlO$_{3}$/SrTiO$_{3}$ Heterostructures |
| Ran Tao1,2, Lin Li1,2*, Li-Jun Zhu1,2, Yue-Dong Yan1,2, Lin-Hai Guo1,2, Xiao-Dong Fan1,2, and Chang-Gan Zeng1,2* |
1International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at the Microscale, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
2CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei 230026, China
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| Cite this article: |
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Ran Tao, Lin Li, Li-Jun Zhu et al 2020 Chin. Phys. Lett. 37 077301 |
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Abstract Hybrid structures of two distinct materials provide an excellent opportunity to optimize functionalities. We report the realization of wide quantum Hall plateaus in graphene field-effect devices on the LaAlO$_{3}$/SrTiO$_{3}$ heterostructures. Well-defined quantized Hall resistance plateaus at filling factors $v=\pm2$ can be obtained over wide ranges of the magnetic field and gate voltage, e.g., extending from 2 T to a maximum available magnetic field of 9 T. By using a simple band diagram model, it is revealed that these wide plateaus arise from the ultra-large capacitance of the ultra-thin LAO layer acting as the dielectric layer. This is distinctly different from the case of epitaxial graphene on SiC substrates, where the realization of giant Hall plateaus relies on the charge transfer between the graphene layer and interface states in SiC. Our results offer an alternative route towards optimizing the quantum Hall performance of graphene, which may find its applications in the further development of quantum resistance metrology.
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Received: 17 April 2020
Published: 21 June 2020
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| Fund: Supported by the National Natural Science Foundation of China (Grant Nos. 11974324, 11804326 and U1832151), the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDC07010000), the National Key Research and Development Program of China (Grant No. 2017YFA0403600), Anhui Initiative in Quantum Information Technologies (Grant No. AHY170000), and Hefei Science Center CAS (Grant No. 2018HSC-UE014). |
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