| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Effect of a Single Threading Dislocation on Electrical and Single Photon Detection Characteristics of 4H-SiC Ultraviolet Avalanche Photodiodes |
| Lin-Lin Su , Dong Zhou**, Qing Liu , Fang-Fang Ren , Dun-Jun Chen , Rong Zhang , You-Dou Zheng , Hai Lu** |
| School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China |
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| Cite this article: |
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Lin-Lin Su , Dong Zhou, Qing Liu et al 2020 Chin. Phys. Lett. 37 068502 |
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Abstract We fabricated 4H-SiC ultraviolet avalanche photodiode (APD) arrays and systematically investigated the effect of threading dislocations on electrical and single photon detection characteristics of 4H-SiC APDs. Based on a statistical correlation study of individual device performance and structural defect mapping revealed by molten KOH etching, it is determined with high confidence level that even a single threading dislocation within APD active region would lead to apparent device performance degradation, including increase of dark current near breakdown voltage, premature breakdown and reduction of single photon detection efficiency at fixed dark count rate.
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Received: 16 March 2020
Published: 26 May 2020
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| PACS: |
85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.60.Gz
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(Photodetectors (including infrared and CCD detectors))
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85.60.Dw
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(Photodiodes; phototransistors; photoresistors)
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85.60.Bt
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(Optoelectronic device characterization, design, and modeling)
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| Fund: *Supported by the National Key R&D Program of China under Grant No. 2016YFB0400902, the National Natural Science Foundation of China under Grant No. 61921005, and the Natural Science Foundation of Jiangsu Province under Grant No. BK20190302 |
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