| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Mid-Infrared InAs/GaSb Superlattice Planar Photodiodes Fabricated by Metal–Organic Chemical Vapor Deposition |
| Yu Zhao1, Yan Teng1, Jing-Jun Miao1, Qi-Hua Wu1, Jing-Jing Gao1, Xin Li1, Xiu-Jun Hao1, Ying-Chun Zhao2, Xu Dong2, Min Xiong2, Yong Huang1** |
1Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China
2Nano-fabrication Facility, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China
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| Cite this article: |
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Yu Zhao, Yan Teng, Jing-Jun Miao et al 2020 Chin. Phys. Lett. 37 068501 |
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Abstract Mid-wavelength infrared planar photodiodes were demonstrated, in which both the epitaxy growth of InAs/GaSb superlattices and the thermal diffusion of p-type dopant were performed in production-scale metal–organic chemical vapor deposition reactors. The formation of a planar homojunction was confirmed by secondary ion mass spectroscopy and its $I$–$V$ characteristics. A cut-off wavelength around 5 μm was determined in 77 K optical characterization, and photo-current as high as 600 nA was collected from a reverse-biased planar diode of 640 μm diameter. These preliminary results were obtained despite the structural degradation revealed by x-ray diffraction, and we attribute the degradation to the concert of thermal annealing and high Zn concentration behind the diffusion front.
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Received: 05 March 2020
Published: 26 May 2020
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| PACS: |
85.60.Gz
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(Photodetectors (including infrared and CCD detectors))
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73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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| Fund: *Supported by the National Natural Science Foundation of China (Grant Nos. 61874179, 61804161, and 61605236). |
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