| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Effects of Low-Damage Plasma Treatment on the Channel 2DEG and Device Characteristics of AlGaN/GaN HEMTs |
| SiQin-GaoWa Bao1,2,3, Jie-Jie Zhu1,2**, Xiao-Hua Ma1,2, Bin Hou1,2, Ling Yang1,2, Li-Xiang Chen1,2, Qing Zhu1,2, Yue Hao2 |
1School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071
2Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071
3School of Science, Inner Mongolia University of Technology, Hohhot 010051
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| Cite this article: |
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SiQin-GaoWa Bao, Jie-Jie Zhu, Xiao-Hua Ma et al 2020 Chin. Phys. Lett. 37 027301 |
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Abstract We investigate the effects of remote nitride-based plasma treatment on the channel carrier and device characteristics of AlGaN/GaN high electron mobility transistors (HEMTs). A 200 W NH$_{3}$/N$_{2}$ remote plasma causes little degeneration of carrier mobility and an increase in electron density due to surface alteration, which results in a decrease in sheet resistance and an increase in output current by 20–30%. Improved current slump, suppressed gate leakage current, and improved Schottky contact properties are also achieved by using low-damage nitride-based plasma treatment. It is found that NH$_{3}$/N$_{2}$ remote plasma treatment is a promising technique for GaN-based HEMTs to modulate the surface conditions and channel properties.
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Received: 12 November 2019
Published: 18 January 2020
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| PACS: |
73.61.Ey
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(III-V semiconductors)
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73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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73.50.Gr
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(Charge carriers: generation, recombination, lifetime, trapping, mean free paths)
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| Fund: Supported by the National Natural Science Foundation of China under Grant Nos. 61634005, 61704124, and 11690042. |
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