| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Field-Induced Metal–Insulator Transition in $\beta$-EuP$_3$ |
| Guangqiang Wang1, Guoqing Chang2, Huibin Zhou1, Wenlong Ma1, Hsin Lin3, M. Zahid Hasan2,4, Su-Yang Xu5, and Shuang Jia1,6,7,8* |
1International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
2Laboratory of Topological Quantum Matter and Advanced Spectroscopy (B7), Department of Physics, Princeton University, Princeton, NJ 08544, USA
3Institute of Physics, Academia Sinica, Taipei 11529, China
4Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
5Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
6Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
7CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
8Beijing Academy of Quantum Information Sciences, Beijing 100193, China
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| Cite this article: |
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Guangqiang Wang, Guoqing Chang, Huibin Zhou et al 2020 Chin. Phys. Lett. 37 107501 |
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Abstract Metal–insulator transition (MIT) is one of the most conspicuous phenomena in correlated electron systems. However such a transition has rarely been induced by an external magnetic field as the field scale is normally too small compared with the charge gap. We present the observation of a magnetic-field-driven MIT in a magnetic semiconductor $\beta $-EuP$_3$. Concomitantly, we find a colossal magnetoresistance in an extreme way: the resistance drops billionfold at 2 K in a magnetic field less than 3 T. We ascribe this striking MIT as a field-driven transition from an antiferromagnetic and paramagnetic insulator to a spin-polarized topological semimetal, in which the spin configuration of Eu$^{2+}$ cations and spin-orbital coupling play a crucial role. As a phosphorene-bearing compound whose electrical properties can be controlled by the application of field, $\beta $-EuP$_3$ may serve as a tantalizing material in the basic research and even future electronics.
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Received: 15 July 2020
Published: 29 September 2020
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| PACS: |
75.47.-m
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(Magnetotransport phenomena; materials for magnetotransport)
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73.50.Jt
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(Galvanomagnetic and other magnetotransport effects)
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72.80.Ga
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(Transition-metal compounds)
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71.55.Ak
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(Metals, semimetals, and alloys)
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| Fund: Supported by the National Natural Science Foundation of China (Grant Nos. U1832214 and 11774007), the National Key R&D Program of China (Grant No. 2018YFA0305601) and the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB28000000). The experimental and theoretical work at Princeton University was supported by the Gordon and Betty Moore Foundation (Grant Nos. GBMF4547 and GBMF9461/Hasan) |
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