| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Fabrication and Characteristics of Nano-Floating Gate Memories with ZnO Nano-Crystals as Charge-Storage Layer |
| Lu Liu, Yong Su**, Jing-Ping Xu, Yi-Xian Zhang |
School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074
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| Cite this article: |
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Lu Liu, Yong Su, Jing-Ping Xu et al 2018 Chin. Phys. Lett. 35 068101 |
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Abstract Nano-floating gate memory devices with ZnO nano-crystals as charge storage layers are fabricated, and the influence of post-deposition annealing temperature and thickness of the ZnO layer are investigated. Atomic force microscopy and scanning electron microscopy reveal the morphology of discrete ZnO nano-crystals. For capacitance-voltage measurements, it is found that the memory device with 1.5 nm ZnO and annealed at 700$^{\circ}\!$C shows a larger memory window of 4.3 V (at $\pm$6 V) and better retention characteristics than memory devices with 2.5 nm ZnO or annealed at other temperatures. These results indicate that the nano-floating gate memory with ZnO nano-crystals can obtain good trade-off memory properties.
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Received: 30 January 2018
Published: 19 May 2018
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| PACS: |
81.07.Bc
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(Nanocrystalline materials)
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81.15.Cd
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(Deposition by sputtering)
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81.16.Dn
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(Self-assembly)
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81.40.Ef
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(Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)
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| Fund: Supported by the National Natural Science Foundation of China under Grant No 61404055. |
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