Chin. Phys. Lett.  2018, Vol. 35 Issue (5): 058401    DOI: 10.1088/0256-307X/35/5/058401
A Simpler Memristor Emulator Based on Varactor Diode
Dong-Sheng Yu1, Ting-Ting Sun1, Ci-Yan Zheng2, H. H. C. Iu2, T. Fernando2**
1School of Electrical and Power Engineering, China University of Mining and Technology, Xuzhou 221116
2School of Electrical, Electronic and Computer Engineering, The University of Western Australia, Perth WA 6009, Australia
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Dong-Sheng Yu, Ting-Ting Sun, Ci-Yan Zheng et al  2018 Chin. Phys. Lett. 35 058401
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Abstract A new memristor (MR) emulator is designed by making use of only three current-feedback operational amplifiers, one varactor diode, one capacitor and five resistors. As compared with other reported MR emulators, only three active devices and ten components in total are required for realizing this MR emulator, and hence this emulator can be regarded as a simpler one for the moment. The results obtained by Multisim simulation and experimental prototypes are given to verify the practicality and feasibility of this MR emulator.
Received: 12 January 2018      Published: 30 April 2018
PACS:  84.30.-r (Electronic circuits)  
  84.30.Bv (Circuit theory)  
  85.25.Hv (Superconducting logic elements and memory devices; microelectronic circuits)  
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Dong-Sheng Yu
Ting-Ting Sun
Ci-Yan Zheng
H. H. C. Iu
T. Fernando
[1]Chua L O 1971 IEEE Trans. Circuit Theory 18 507
[2]Strukov D B, Snider G S, Stewart D R et al 2008 Nature 453 80
[3]Wu H Q, Li X Y, Wu M H et al 2014 IEEE Electron Device Lett. 35 39
[4]Wu W, Wu H Q, Gao B et al 2017 IEEE Electron Device Lett. 38 1019
[5]Yao P, Wu H Q, Gao B et al 2017 Nat. Commun. 8 15199
[6]Sheridan P M, Cai F X, Du C et al 2017 Nat. Nanotechnol. 12 784
[7]Valsa J, Biolek D and Biolek Z 2011 Int. J. Numer. Model. 24 400
[8]Muthuswamy B 2010 Int. J. Bifurcation Chaos Appl. Sci. Eng. 20 1335
[9]Fitch A L, Iu H H C, Wang X Y et al 2012 IEEE Int Symp. Circuit Syst.(ISCAS) (Seoul, South Korea) p 1139
[10]Shin S, Zheng L, Weickhardt G et al 2013 IEEE Circuits Syst. Mag. 13 2
[11]Abuelma'Atti M T and Khalifa Z J 2016 Analog Integr. Circuit Syst. Process. 86 141
[12]Alharbi A G, Fouda M E and Khalifa Z J et al 2017 IEEE Access 5 5399
[13]Sánchez-López C, Carrasco-Aguilar M A and Muñiz-Montero C 2015 Int. J. Electron. Commun. 69 1208
[14]Yu D S, Iu, H H C, Fitch A L et al 2014 IEEE Trans. Circuit Syst. I-Regular Papers 61 2888
[15]Ranjan R, Ponce P M, Hellweg W L et al 2017 J. Circuits Syst. Comput. 26 1750183
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