Chin. Phys. Lett.  2018, Vol. 35 Issue (5): 057303    DOI: 10.1088/0256-307X/35/5/057303
Electroluminescence from the InGaN/GaN Superlattices Interlayer of Yellow LEDs with Large V-Pits Grown on Si (111)
Xi-xia Tao1, Chun-lan Mo1,2**, Jun-lin Liu1,2, Jian-li Zhang1,2, Xiao-lan Wang1,2, Xiao-ming Wu1,2, Long-quan Xu1,2, Jie Ding1,2, Guang-xu Wang1,2, Feng-yi Jiang1
1National Institute of LED on Silicon Substrate, Nanchang University, Nanchang 330047
2Nanchang Yellow Green Lighting Company Limited, Nanchang 330047
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Xi-xia Tao, Chun-lan Mo, Jun-lin Liu et al  2018 Chin. Phys. Lett. 35 057303
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Abstract A blue emission originated from InGaN/GaN superlattice (SL) interlayer is observed in the yellow LEDs with V-pits embedded in the quantum wells (QWs), revealing that sufficient holes have penetrated through the QWs into SLs far away from the p-type layer. In the V-pits embedded LEDs, hole transport has two paths: via the flat $c$-plane region or via the sidewalls of V-pits. It is proved that the holes in SLs are injected from the sidewalls of V-pits, and the transportation process is significantly affected by working temperature, current density, and the size of V-pits. Four motion possibilities are discussed when the holes flow via the sidewalls. All these may contribute to a better understanding of hole transport and device design.
Received: 29 January 2018      Published: 30 April 2018
PACS:  73.61.Ey (III-V semiconductors)  
  78.60.Fi (Electroluminescence)  
  73.21.Fg (Quantum wells)  
  73.21.Cd (Superlattices)  
Fund: Supported by the National Key Research and Development Program of China under Grant Nos 2016YFB0400600 and 2016YFB0400601, the National Natural Science Foundation of China under Grant Nos 61334001, 61604066, 21405076, 11604137, 11674147, 51602141 and 61704069, and the Key Research and Development Program of Jiangxi Province of China under Grant No 20165ABC28007.
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Xi-xia Tao
Chun-lan Mo
Jun-lin Liu
Jian-li Zhang
Xiao-lan Wang
Xiao-ming Wu
Long-quan Xu
Jie Ding
Guang-xu Wang
Feng-yi Jiang
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