| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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Fabrication of 4-Inch Nano Patterned Wafer with High Uniformity by Laser Interference Lithography |
| Gen Yue1,2, Yu Lei1,2, Jun-Hui Die1,2, Hai-Qiang Jia1,2, Hong Chen1,2** |
1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190
2School of Physics, University of Chinese Academy of Sciences, Beijing 100049
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| Cite this article: |
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Gen Yue, Yu Lei, Jun-Hui Die et al 2018 Chin. Phys. Lett. 35 054207 |
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Abstract We report the fabrication of 4-inch nano patterned wafer by two-beam laser interference lithography and analyze the uniformity in detail. The profile of the dots array with a period of 800 nm divided into five regions is characterized by a scanning electron microscope. The average size in each region ranges from 270 nm to 320 nm, and the deviation is almost 4%, which is approaching the applicable value of 3% in the industrial process. We simulate the two-beam laser interference lithography system with MATLAB software and then calculate the distribution of light intensity around the 4 inch area. The experimental data fit very well with the calculated results. Analysis of the experimental data and calculated data indicates that laser beam quality and space filter play important roles in achieving a periodical nanoscale pattern with high uniformity and large area. There is the potential to obtain more practical applications.
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Received: 19 March 2018
Published: 30 April 2018
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| PACS: |
42.25.Hz
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(Interference)
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42.50.St
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(Nonclassical interferometry, subwavelength lithography)
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42.60.By
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(Design of specific laser systems)
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78.40.Fy
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(Semiconductors)
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| Fund: Supported by the Scientific Equipment Research Program of Chinese Academy of Sciences under Grant No 2014Y4201449. |
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