| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Resistivity and Radio-Frequency Properties of Two-Generation Trap-Rich Silicon-on-Insulator Substrates |
| Lei Zhu1,2,3, Yong-Wei Chang1,3, Nan Gao1,3, Xin Su1,3, YeMin Dong1,3, Lu Fei1,3,4, Xing Wei1,4**, Xi Wang1,2,3 |
1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
2School of Physical Science and Technology, Shanghaitech University, Shanghai 200031
3University of Chinese Academy of Sciences, Beijing 100049
4Shanghai Simgui Technology Co., Ltd., Shanghai 201815
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| Cite this article: |
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Lei Zhu, Yong-Wei Chang, Nan Gao et al 2018 Chin. Phys. Lett. 35 047302 |
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Abstract Crystal morphologies and resistivity of polysilicon trap-rich layers of two-generation trap-rich silicon-on-insulator (TR-SOI) substrates are studied. It is found that the resistivity of the trap-rich layer of generation 2 (TR-G2) is higher than that of generation 1 (TR-G1), although the crystal morphologies of the trap rich layers are the same. In addition, the rf performance of two-generation TR-SOI substrates is investigated by coplanar waveguide lines and inductors. The results show that both the rf loss and the second harmonic distortion of TR-G2 are smaller than those of TR-G1. These results can be attributed to the higher resistivity values of both the trap-rich layer and the high-resistivity silicon (HR-Si) substrate of TR-G2. Moreover, the rf performance of the TR-SOI substrate with thicker buried oxide is slightly better. The second harmonics of various TR-SOI substrates are simulated and evaluated with the harmonic quality factor model as well. It can be predicted that the TR-SOI substrate will see further improvement in rf performance if the resistivities of both the trap-rich layer and HR-Si substrate increase.
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Received: 29 December 2017
Published: 13 March 2018
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| PACS: |
73.40.Ty
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(Semiconductor-insulator-semiconductor structures)
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84.32.-y
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(Passive circuit components)
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84.32.Ff
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(Conductors, resistors (including thermistors, varistors, and photoresistors))
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| Fund: Supported by the National Natural Science Foundation of China under Grant Nos 61376021 and 61674159, and the Program of Shanghai Academic/Technology Research Leader under Grant No 17XD1424500. |
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