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Realization of Quantum Maxwell's Demon with Solid-State Spins
W.-B. Wang, X.-Y. Chang, F. Wang, P.-Y. Hou, Y.-Y. Huang, W.-G. Zhang, X.-L. Ouyang, X.-Z. Huang, Z.-Y. Zhang, H.-Y. Wang, L. He, L.-M. Duan
Chin. Phys. Lett. 2018, 35 (4):
040301
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DOI: 10.1088/0256-307X/35/4/040301
We report experimental realization of a quantum version of Maxwell's demon using solid state spins where the information acquiring and feedback operations by the demon are achieved through conditional quantum gates. A unique feature of this implementation is that the demon can start in a quantum superposition state or in an entangled state with an ancilla observer. Through quantum state tomography, we measure the entropy in the system, demon, and the ancilla, showing the influence of coherence and entanglement on the result. A quantum implementation of Maxwell's demon adds more controllability to this paradoxical thermal machine and may find applications in quantum thermodynamics involving microscopic systems.
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Neutron Diffraction of Large-Volume Samples at High Pressure Using Compact Opposed-Anvil Cells
Xiao-Lin Ni, Lei-Ming Fang, Xin Li, Xi-Ping Chen, Lei Xie, Duan-Wei He, Zi-Li Kou
Chin. Phys. Lett. 2018, 35 (4):
040701
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DOI: 10.1088/0256-307X/35/4/040701
Neutron diffraction techniques of large-volume samples at high pressure using compact opposed-anvil cells are developed at a reactor neutron source, China's Mianyang research reactor. We achieve a high-pressure condition of in situ neutron diffraction by means of a newly designed large-volume opposed-anvil cell. This pressure calibration is based on resistance measurements of bismuth and the neutron diffraction of iron. Pressure calibration experiments are performed at room temperature for a new cell using the tungsten carbide anvils with a tapered angle of 30$^{\circ}$, ${\it \Phi}$4.5 mm culet diameter and the metal-nonmetal composite gasket with a thickness of 2 mm. Transitions in Bi (I–II 2.55 GPa, III–V 7.7 GPa) are observed at 100 and 300 kN, respectively, by resistance measurements. The pressure measurement results of neutron diffraction are consistent with resistance measurements of bismuth. As a result, pressures up to about 7.7 GPa can routinely and stably be achieved using this apparatus, with the sample volume of 9 mm$^{3}$.
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Kramers–Henneberger Form of Strong Field Theory with the Correction of Dipole Approximation
Yi-Ning Huo, Jian Li, Feng-Cai Ma
Chin. Phys. Lett. 2018, 35 (4):
043202
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DOI: 10.1088/0256-307X/35/4/043202
We show that the breakdown of dipole approximation can be adopted to explain the asymmetry structure in the photoelectron momentum distributions along the beam propagation direction, which is defined as the photoelectron longitudinal momentum distributions (PLMD), in tunneling regime ($\gamma_{\rm K}\ll 1$), based on the strong field approximation theory. The nondipole Hamiltonian for photoelectrons interacting with laser fields from a hydrogen-like atom is transformed into the Kramers–Henneberger frame in our model. To introduce the correction of dipole approximation, the spatial variable is kept in a vector potential ${\boldsymbol A}({\boldsymbol r},t)$, demonstrating that the breakdown of dipole approximation is the major reason for the shift of the peak in PLMD. The nondipole effects are apparent when circularly polarized lasers are adopted to ionize the atoms, and clear tendency to increase offsets is found for increasing laser intensities.
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Experimental Determination of the Landé $g$-Factors for 5$s^{2}$$^{1}\!S$ and $5s5p$$^{3}\!P$ States of the $^{87}$Sr Atom
Ben-quan Lu, Yebing Wang, Yang Guo, Qinfang Xu, Mojuan Yin, Jiguang Li, Hong Chang
Chin. Phys. Lett. 2018, 35 (4):
043203
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DOI: 10.1088/0256-307X/35/4/043203
We present an experimental determination on the Landé $g$-factors for the 5$s^{2}$ $^{1}\!S_{0}$ and $5s5p$ $^{3}\!P_{0}$ states in ultra-cold atomic systems, which is important for evaluating the Zeeman shift of the clock transition in the $^{87}$Sr optical lattice clock. The Zeeman shift of the $5s5p$ $^{3}\!P_{0}$–5$s^{2}$ $^{1}\!S_{0}$ forbidden transition is measured with the $\pi$-polarized and $\sigma^{\pm}$-polarized interrogations at different magnetic field strengths. Moreover, in the $g$-factor measurement with the $\sigma^{\pm}$-transition spectra, it is unnecessary to calibrate the external magnetic field. By this means, the ground state 5$s^{2}$ $^{1}\!S_{0}$ $g$-factor for the $^{87}$Sr atom is $-1.306(52)\times10^{-4}$, which is the first experimental determination to the best of our knowledge, and the result matches very well with the theoretical estimation. The differential $g$-factor $\delta g$ between the $5s5p$ $^{3}\!P_{0}$ state and the 5$s^{2}$ $^{1}\!S_{0}$ state of the $^{87}$Sr atoms is measured in the experiment as well, which are $-7.67(36)\times10^{-5}$ with $\pi$-transition spectra and $-7.72(43)\times10^{-5}$ with $\sigma^{\pm}$-transition spectra, in good agreement with the previous report [Phys. Rev. A 76 (2007) 022510]. This work can also be used for determining the differential $g$-factor of the clock states for the optical clocks based on other atoms.
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Electrically and Optically Bistable Operation in an Integration of a 1310nm DFB Laser and a Tunneling Diode
Ya-Jie Li, Jia-Qi Wang, Lu Guo, Guang-Can Chen, Zhao-Song Li, Hong-Yan Yu, Xu-Liang Zhou, Huo-Lei Wang, Wei-Xi Chen, Jiao-Qing Pan
Chin. Phys. Lett. 2018, 35 (4):
044202
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DOI: 10.1088/0256-307X/35/4/044202
We experimentally demonstrate an InP-based hybrid integration of a single-mode DFB laser emitting at around 1310 nm and a tunneling diode. The evident negative differential resistance regions are obtained in both electrical and optical output characteristics. The electrical and optical bistabilities controlled by the voltage through the tunneling diode are also measured. When the voltage changes between 1.46 V and 1.66 V, a 200-mV-wide hysteresis loop and an optical power ON/OFF ratio of 17 dB are obtained. A side-mode suppression ratio of the integrated device in the ON state is up to 43 dB. The tunneling diode can switch on/off the laser within a very small voltage range compared with that directly controlled by a voltage source.
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Extraordinary Electromagnetic Waves in Weakly Relativistic Degenerate Spin-1/2 Magnetized Quantum Plasmas
Chun-Hua Li, Shao-Wei Wang, Yun-Hao Liu, Zhen-Wei Xia, Xiao-Hui Zhang, Dan-Dan Zou
Chin. Phys. Lett. 2018, 35 (4):
045201
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DOI: 10.1088/0256-307X/35/4/045201
By using the relativistic quantum magnetohydrodynamic model, the extraordinary electromagnetic waves in magnetized quantum plasmas are investigated with the effects of particle dispersion associated with the quantum Bohm potential effects, the electron spin-1/2 effects, and the relativistic degenerate pressure effects. The electrons are treated as a quantum and magnetized species, while the ions are classical ones. The new general dispersion relations are derived and analyzed in some interesting special cases. Quantum effects are shown to affect the dispersion relations of the extraordinary electromagnetic waves. It is also shown that the relativistic degenerate pressure effects significantly modify the dispersive properties of the extraordinary electromagnetic waves. The present investigation should be useful for understanding the collective interactions in dense astrophysical bodies, such as the atmosphere of neutron stars and the interior of massive white dwarfs.
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Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65nm NMOSFETs
Qi-Wen Zheng, Jiang-Wei Cui, Ying Wei, Xue-Feng Yu, Wu Lu, Diyuan Ren, Qi Guo
Chin. Phys. Lett. 2018, 35 (4):
046102
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DOI: 10.1088/0256-307X/35/4/046102
The bias dependence of radiation-induced narrow-width channel effects (RINCEs) in 65-nm n-type metal-oxide-semiconductor field-effect transistors (NMOSFETs) is investigated. The threshold voltage of the narrow-width 65 nm NMOSFET is negatively shifted by total ionizing dose irradiation, due to the RINCE. The experimental results show that the 65 nm narrow-channel NMOSFET has a larger threshold shift when the gate terminal is kept in the ground, which is contrary to the conclusion obtained in the old generation devices. Depending on the three-dimensional simulation, we conclude that electric field distribution alteration caused by shallow trench isolation scaling is responsible for the anomalous RINCE bias dependence in 65 nm technology.
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Nonvolatile Resistive Switching and Physical Mechanism in LaCrO$_{3}$ Thin Films
Wan-Jing Hu, Ling Hu, Ren-Huai Wei, Xian-Wu Tang, Wen-Hai Song, Jian-Ming Dai, Xue-Bin Zhu, Yu-Ping Sun
Chin. Phys. Lett. 2018, 35 (4):
047301
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DOI: 10.1088/0256-307X/35/4/047301
Polycrystalline LaCrO$_{3}$ (LCO) thin films are deposited on Pt/Ti/SiO$_{2}$/Si substrates by pulsed laser deposition and used as the switching material to construct resistive random access memory devices. The unipolar resistive switching (RS) behavior in the Au/LCO/Pt devices exhibits a high resistance ratio of $\sim 10^{4}$ between the high resistance state (HRS) and low resistance state (LRS) and exhibits excellent endurance/retention characteristics. The conduction mechanism of the HRS in the high voltage range is dominated by the Schottky emission, while the Ohmic conduction dictates the LRS and the low voltage range of HRS. The RS behavior in the Au/LCO/Pt devices can be understood by the formation and rupture of conducting filaments consisting of oxygen vacancies, which is validated by the temperature dependence of resistance and x-ray photoelectron spectroscopy results. Further analysis shows that the reset current $I_{\rm R}$ and reset power $P_{\rm R}$ in the reset processes exhibit a scaling law with the resistance in LRS ($R_{0}$), which indicates that the Joule heating effect plays an essential role in the RS behavior of the Au/LCO/Pt devices.
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Resistivity and Radio-Frequency Properties of Two-Generation Trap-Rich Silicon-on-Insulator Substrates
Lei Zhu, Yong-Wei Chang, Nan Gao, Xin Su, YeMin Dong, Lu Fei, Xing Wei, Xi Wang
Chin. Phys. Lett. 2018, 35 (4):
047302
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DOI: 10.1088/0256-307X/35/4/047302
Crystal morphologies and resistivity of polysilicon trap-rich layers of two-generation trap-rich silicon-on-insulator (TR-SOI) substrates are studied. It is found that the resistivity of the trap-rich layer of generation 2 (TR-G2) is higher than that of generation 1 (TR-G1), although the crystal morphologies of the trap rich layers are the same. In addition, the rf performance of two-generation TR-SOI substrates is investigated by coplanar waveguide lines and inductors. The results show that both the rf loss and the second harmonic distortion of TR-G2 are smaller than those of TR-G1. These results can be attributed to the higher resistivity values of both the trap-rich layer and the high-resistivity silicon (HR-Si) substrate of TR-G2. Moreover, the rf performance of the TR-SOI substrate with thicker buried oxide is slightly better. The second harmonics of various TR-SOI substrates are simulated and evaluated with the harmonic quality factor model as well. It can be predicted that the TR-SOI substrate will see further improvement in rf performance if the resistivities of both the trap-rich layer and HR-Si substrate increase.
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Current–Voltage Characteristics of the Aziridine-Based Nano-Molecular Wires: a Light-Driven Molecular Switch
Ayoub Kanaani, Mohammad Vakili, Davood Ajloo, Mehdi Nekoei
Chin. Phys. Lett. 2018, 35 (4):
048501
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DOI: 10.1088/0256-307X/35/4/048501
Using nonequilibrium Green's function formalism combined first-principles density functional theory, we analyze the transport properties of a 4,4-dimethyl-6-(4-nitrophenyl)-2-phenyl-3,5-diaza-bicyclo[3.1.0]hex-2-ene molecular optical switch. The title molecule can convert between closed and open forms by visible or ultraviolet irradiation. The $I$–$V$ characteristics, differential conductance, on-off ratio, electronic transmission coefficients, spatial distribution of molecular projected self-consistent Hamiltonian orbitals, HOMO-LUMO gaps, effect of electrode materials $Y$(111) ($Y=$Au, Ag and Pt) on electronic transport and different molecular geometries corresponding to the closed and open forms through the molecular device are discussed in detail. Based on the results, as soon as possible the open form translates to the closed form, and there is a switch from the ON state to the OFF state (low resistance switches to high resistance). Theoretical results show that the donor/acceptor substituent plays an important role in the electronic transport of molecular devices. The switching performance can be improved to some extent through suitable donor and acceptor substituents.
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Low-Frequency Noise in Amorphous Indium Zinc Oxide Thin Film Transistors with Aluminum Oxide Gate Insulator
Ya-Yi Chen, Yuan Liu, Zhao-Hui Wu, Li Wang, Bin Li, Yun-Fei En, Yi-Qiang Chen
Chin. Phys. Lett. 2018, 35 (4):
048502
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DOI: 10.1088/0256-307X/35/4/048502
Low-frequency noise (LFN) in all operation regions of amorphous indium zinc oxide (a-IZO) thin film transistors (TFTs) with an aluminum oxide gate insulator is investigated. Based on the LFN measured results, we extract the distribution of localized states in the band gap and the spatial distribution of border traps in the gate dielectric, and study the dependence of measured noise on the characteristic temperature of localized states for a-IZO TFTs with Al$_2$O$_3$ gate dielectric. Further study on the LFN measured results shows that the gate voltage dependent noise data closely obey the mobility fluctuation model, and the average Hooge's parameter is about $1.18\times10^{-3}$. Considering the relationship between the free carrier number and the field effect mobility, we simulate the LFN using the $\Delta N$–$\Delta\mu$ model, and the total trap density near the IZO/oxide interface is about $1.23\times 10^{18}$ cm$^{-3}$eV$^{-1}$.
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A Dynamic Model of Heavy Ion $^{7}$Li Irradiation Mutagenesis Based on Maize Inbred Line Nutrition Difference
Jin-Shan Hu, Jin-Peng Geng, Duo-Fang Li, Li Sui, Yong Zhan
Chin. Phys. Lett. 2018, 35 (4):
048701
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DOI: 10.1088/0256-307X/35/4/048701
To reveal the saddle-type dose effect relationship, we propose a radiation mutagenesis model based on maize nutrition difference resulting from heavy ion $^{7}$Li radiation. Through irradiation mutagenesis, apparent trait selection, amino acids and fatty acids content determination, and modeling, dynamic evolution from microscopic damage and repair initiation to the final macroscopic biological effects are considered simultaneously. The results show that the steady state nature is independent of evolution time and only relates to different radiation doses. Heavy ion $^{7}$Li radiation could effectively cause maize phenotypic variation and could improve nutritional quality. This model not only gives a good fit to the experimental results on most types of amino acids and fatty acids, but also offers an adequate explanation of the experimental phenomenon underlying the saddle-type bimodal dose effect. By combining experimental results with theoretical analyses, we suggest that the synergy of the stimulus effect and momentum transfer is the main cause of the saddle-type dose effect bimodal curve. This provides an effective strategy for conducting maize germplasm innovation.
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A High-Temperature $\beta$-Phase NaMnO$_{2}$ Stabilized by Cu Doping and Its Na Storage Properties
Li-Wei Jiang, Ya-Xiang Lu, Yue-Sheng Wang, Li-Lu Liu, Xing-Guo Qi, Cheng-Long Zhao, Li-Quan Chen, Yong-Sheng Hu
Chin. Phys. Lett. 2018, 35 (4):
048801
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DOI: 10.1088/0256-307X/35/4/048801
The high-temperature $\beta$-phase NaMnO$_{2}$ is a promising material for Na-ion batteries (NIBs) due to its high capacity and abundant resources. However, the synthesis of phase-pure $\beta$-NaMnO$_{2}$ is burdensome and cost-ineffective because it needs to be sintered under oxygen atmosphere at high temperature and followed by a quenching procedure. Here we first report that the pure $\beta$ phase can be stabilized by Cu-doping and easily synthesized by replacing a proportion of Mn with Cu via a simplified process including sintering in air and cooling to room temperature naturally. Based on the first-principle calculations, the band gap decreases from 0.7 eV to 0.3 eV, which indicates that the electronic conductivity can be improved by Cu-doping. The designed $\beta$-NaCu$_{0.1}$Mn$_{0.9}$O$_{2}$ is applied as cathode in NIBs, exhibiting an energy density of 419 Wh/kg and better performance in terms of rate capability and cycling stability than those in the undoped case.
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31 articles
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