| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Efficient Visible Photoluminescence from Self-Assembled Ge QDs Embedded in Silica Matrix |
| Alireza Samavati**, Zahra Samavati, A. F. Ismail**, M. H. D. Othman, M. A. Rahman, A. K. Zulhairun |
Advanced Membrane Technology Research Centre, Universiti Teknologi Malaysia, Skudai 81310, Malaysia
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| Cite this article: |
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Alireza Samavati, Zahra Samavati, A. F. Ismail et al 2017 Chin. Phys. Lett. 34 068102 |
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Abstract Measuring the growth parameters of Ge quantum dots (QDs) embedded in SiO$_{2}$/Si hetero-structure is pre-requisite for developing the optoelectronic devices such as photovoltaics and sensors. Their optical properties can be tuned by tailoring the growth morphology and structures, where the growth parameters' optimizations still need to be explored. We determine the effect of annealing temperature on surface morphology, structures and optical properties of Ge/SiO$_{2}$/Si hetero-structure. Samples are grown via rf magnetron sputtering and subsequent characterizations are made using imaging and spectroscopic techniques.
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Received: 15 February 2017
Published: 23 May 2017
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| Fund: Supported by the Advanced Membrane Technology Research Center of the Universities Teknologi Malaysia under Grant No R.J130000.7609.4C112, the Postdoctoral Grant, and the Frontier Materials Research Alliance. |
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