| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Radio-Frequency Characteristics of Partial Dielectric Removal HR-SOI and TR-SOI Substrates |
| Shi Cheng1,2,3, Yong-Wei Chang1,3, Nan Gao1,3, Ye-Min Dong1,3, Lu Fei1,3, Xing Wei1**, Xi Wang1,3 |
1 State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
2School of Physical Science and Technology, Shanghaitech University, Shanghai 200031
3University of Chinese Academy of Sciences, Beijing 100049
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| Cite this article: |
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Shi Cheng, Yong-Wei Chang, Nan Gao et al 2017 Chin. Phys. Lett. 34 068101 |
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Abstract High-resistivity silicon-on-insulator (HR-SOI) and trap-rich high-resistivity silicon-on-insulator (TR-SOI) substrates have been widely adopted for high-performance rf integrated circuits. Radio-frequency loss and non-linearity characteristics are measured from coplanar waveguide (CPW) transmission lines fabricated on HR-SOI and TR-SOI substrates. The patterned insulator structure is introduced to reduce loss and non-linearity characteristics. A metal-oxide-semiconductor (MOS) CPW circuit model is established to expound the mechanism of reducing the parasitic surface conductance (PSC) effect by combining the semiconductor characteristic analysis (pseudo-MOS and $C$–$V$ test). The rf performance of the CPW transmission lines under dc bias supply is also compared. The TR-SOI substrate with the patterned oxide structure sample has the minimum rf loss ($ < $0.2 dB/mm up to 10 GHz), the best non-linearity performance, and reductions of 4 dB and 10 dB are compared with the state-of-the-art TR-SOI sample's, HD2 and HD3, respectively. It shows the potential application for integrating the two schemes to further suppress the PSC effect.
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Received: 10 March 2017
Published: 23 May 2017
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| PACS: |
81.05.Hd
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(Other semiconductors)
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84.32.-y
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(Passive circuit components)
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84.32.Ff
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(Conductors, resistors (including thermistors, varistors, and photoresistors))
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| [1] | Roda N C 2012 PhD Dissertation (Brussels: Université catholique de Louvain) | | [2] | Colinge J P 1997 Silicon-on-Insulator Technology: Materials to VLSI (Netherlands: Kluwer Academic Publisher) chap 2 p 25 | | [3] | Lederer D, Roda N C and Olbrechts B 2008 ECS Meeting (Honolulu USA 12–17 October 2008) 16 165 | | [4] | Wu Y, Gamble H S and Armstrong B M 1999 IEEE Microwave Guided Wave Lett. 9 10 | | [5] | Schollhorn C, Zhao W W, Morschbach M and Kasper E 2003 IEEE Trans. Electron Devices 50 740 | | [6] | Wu Y H, Chin A and Shih 2000 IEEE Electron Device Lett. 21 442 | | [7] | Chang J G, Wu C B, Ji X L, Ma H W, Yan F, Shi Y and Zhang R 2012 Chin. Phys. Lett. 29 058501 | | [8] | Roda N C, Lederer D and Raskin J P 2007 Eur. Microwave Conf. (Munich Germany 8–12 Oct 2008) p 592 | | [9] | Jansman B A, Beek J, Delden M H W M and Widdershoven F 2003 Eur. Solid-State Device Res. Conf. (Estoril Portugal 16–18 September 2003) p 3 | | [10] | Kamins T 1988 Polycrystalline Silicon for Integrated Circuits Applications (Netherlands: Kluwer Academic Publishers) chap 5 p 166 | | [11] | Lederer D and Raskin J P 2005 IEEE Electron Device Lett. 26 805 | | [12] | Ben A K, Roda N C and Malaquin C 2012 IEEE Int. SOI Conf. (Napa USA 1–4 October 2012) 42 1 | | [13] | Lederer D and Raskin J P 2008 IEEE Trans. Electron Devices 55 1664 | | [14] | Cristoloveanu S and Williams S 1992 IEEE Electron Device Lett. 13 102 | | [15] | Lu H C and Chu T H 2004 IEEE Microwave Theory Tech. Soc. Int. Microwave Symp. Dig. (Piscataway USA 6–11 June 2004) p 1801 | | [16] | Wu Y, Gamble H S and Armstrong B M 1998 IEEE Topical Meeting Silicon Monolithic Integrated Circuits Radio-Frequency Systems (Ann. Arbor MI USA 17–18 September 1998) p 178 | | [17] | Yang S D, Hu Z R and Buchanan N B 1998 IEEE Trans. Microwave Theory Tech. 46 536 | | [18] | Makioka, Anda Y and Miyatsuji K 2001 IEEE Trans. Electron Devices 48 1510 | | [19] | Gamble H S, Armstrong B M and Mitchell S J N 1999 IEEE Microwave Guided Wave Lett. 9 395 | | [20] | Rong B, Burghartz J N and Nanver L K 2004 IEEE Electron Device Lett. 25 176 | | [21] | Rong B, Nanaver L K and Burghartz J N 2003 Europan Solid-State Device Res. Conf. (Estoril Portugal 16–18 September 2003 ) p 223 | | [22] | Kerr D C, Gering J M and McKay T G 2008 IEEE Topical Meeting Silicon Monolithic Integrated Circuits Radio-Frequency Systems (San Diego USA 23–25 January 2008) p 151 | | [23] | Roda N C and Raskin J P 2012 IEEE Trans. Electron Devices 59 924 | | [24] | Wang T, Dai Y B, Ouyang S K, Wu J S and Shen H S 2004 Chin. Phys. Lett. 21 2163 |
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