| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Robust Performance of AlGaN-Channel Metal-Insulator-Semiconductor High-Electron-Mobility Transistors at High Temperatures |
| Li Zhang, Jin-Feng Zhang, Wei-Hang Zhang, Tao Zhang, Lei Xu, Jin-Cheng Zhang**, Yue Hao |
Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071
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| Cite this article: |
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Li Zhang, Jin-Feng Zhang, Wei-Hang Zhang et al 2017 Chin. Phys. Lett. 34 128501 |
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Abstract Superior characteristics of AlGaN-channel metal-insulator-semiconductor (MIS) high electron mobility transistors (HEMTs) at high temperatures are demonstrated in detail. The temperature coefficient of the maximum saturation drain current for the AlGaN-channel MIS HEMT can be reduced by 50% compared with the GaN-channel HEMT. Moreover, benefiting from the better suppression of gate current and reduced leakage current in the buffer layer, the AlGaN-channel MIS HEMT demonstrates an average breakdown electric field of 1.83 MV/cm at 25$^{\circ}\!$C and 1.06 MV/cm at 300$^{\circ}\!$C, which is almost 2 times and 3 times respectively larger than that of the reference GaN-channel HEMT. Pulsed mode analyses suggest that the proposed device suffers from smaller current collapse when the temperature reaches as high as 300$^{\circ}\!$C.
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Received: 03 July 2017
Published: 24 November 2017
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| PACS: |
85.30.Tv
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(Field effect devices)
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72.80.Ey
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(III-V and II-VI semiconductors)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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| Fund: Supported by the 111 Project (B12026). |
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