| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Low-Frequency Noise in Gate Tunable Topological Insulator Nanowire Field Emission Transistor near the Dirac Point |
| Hao Zhang1,2, Zhi-Jun Song2, Jun-Ya Feng2, Zhong-Qing Ji2**, Li Lu2 |
1Department of Physics, Northwest University, Xi'an 710069
2Institute of Physics, Chinese Academy of Sciences, Beijing 100190
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| Cite this article: |
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Hao Zhang, Zhi-Jun Song, Jun-Ya Feng et al 2016 Chin. Phys. Lett. 33 087302 |
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Abstract Low-frequency flicker noise is usually associated with material defects or imperfection of fabrication procedure. Up to now, there is only very limited knowledge about flicker noise of the topological insulator, whose topologically protected conducting surface is theoretically immune to back scattering. To suppress the bulk conductivity we synthesize antimony doped Bi$_2$Se$_3$ nanowires and conduct transport measurements at cryogenic temperatures. The low-frequency current noise measurement shows that the noise amplitude at the high-drain current regime can be described by Hooge's empirical relationship, while the noise level is significantly lower than that predicted by Hooge's model near the Dirac point. Furthermore, different frequency responses of noise power spectrum density for specific drain currents at the low drain current regime indicate the complex origin of noise sources of topological insulator.
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Received: 26 April 2016
Published: 31 August 2016
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| PACS: |
73.25.+i
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(Surface conductivity and carrier phenomena)
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73.63.Nm
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(Quantum wires)
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72.70.+m
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(Noise processes and phenomena)
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