| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Improved Semipolar (11$\bar{2}$2) GaN Quality Grown on $m$-Plane Sapphire Substrates by Metal Organic Chemical Vapor Deposition Using Self-Organized SiN$_{x}$ Interlayer |
| Sheng-Rui Xu1, Ying Zhao1, Teng Jiang1, Jin-Cheng Zhang1**, Pei-Xian Li2**, Yue Hao1 |
1Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071
2School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071
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| Cite this article: |
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Sheng-Rui Xu, Ying Zhao, Teng Jiang et al 2016 Chin. Phys. Lett. 33 068102 |
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Abstract The effect of a self-organized SiN$_{x}$ interlayer on the defect density of (11$\bar{2}$2) semipolar GaN grown on $m$-plane sapphire is studied by transmission electron microscopy, atomic force microscopy and high resolution x-ray diffraction. The SiN$_{x}$ interlayer reduces the $c$-type dislocation density from $2.5\times10^{10}$ cm$^{-2}$ to $5\times10^{8}$ cm$^{-2}$. The SiN$_{x}$ interlayer produces regions that are free from basal plane stacking faults (BSFs) and dislocations. The overall BSF density is reduced from $2.1\times10^{5}$ cm$^{-1}$ to $1.3\times10^{4}$ cm$^{-1}$. The large dislocations and BSF reduction in semipolar (11$\bar{2}$2) GaN with the SiN$_{x}$ interlayer result from two primary mechanisms. The first mechanism is the direct dislocation blocking by the SiN$_{x}$ interlayer, and the second mechanism is associated with the unique structure character of (11$\bar{2}$2) semipolar GaN.
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Received: 29 January 2016
Published: 30 June 2016
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| PACS: |
81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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81.10.Aj
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(Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)
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71.55.Eq
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(III-V semiconductors)
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78.55.Ap
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(Elemental semiconductors)
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