| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Gate-Voltage-Induced Magnetization Reversal and Tunneling Anisotropic Magnetoresistance in a Single Molecular Magnet with Temperature Gradient |
| Shu-Jing Li1, Yu-Ying Zhang1, Wei-Ping Xu1,2, Yi-Hang Nie1** |
1Institute of Theoretical Physics, Shanxi University, Taiyuan 030006
2School of Applied Science, Taiyuan University of Science and Technology, Taiyuan 030024
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| Cite this article: |
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Shu-Jing Li, Yu-Ying Zhang, Wei-Ping Xu et al 2016 Chin. Phys. Lett. 33 067203 |
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Abstract We study the control of gate voltage over the magnetization of a single-molecule magnet (SMM) weakly coupled to a ferromagnetic and a normal metal electrode in the presence of the temperature gradient between two electrodes. It is demonstrated that the SMM's magnetization can change periodically with periodic gate voltage due to the driving of the temperature gradient. Under an appropriate matching of the electrode polarization, the temperature difference and the pulse width of gate voltage, the SMM's magnetization can be completely reversed in a period of gate voltage. The corresponding flipping time can be controlled by the system parameters. In addition, we also investigate the tunneling anisotropic magnetoresistance (TAMR) of the device in the steady state when the ferromagnetic electrode is noncollinear with the easy axis of the SMM, and show the jump characteristic of the TAMR.
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Received: 02 December 2015
Published: 30 June 2016
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| PACS: |
72.15.Jf
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(Thermoelectric and thermomagnetic effects)
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75.50.Xx
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(Molecular magnets)
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75.60.Jk
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(Magnetization reversal mechanisms)
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Abstract
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