CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Tunneling Negative Magnetoresistance via $\delta$ Doping in a Graphene-Based Magnetic Tunnel Junction |
Jian-Hui Yuan1**, Ni Chen1, Hua Mo1, Yan Zhang1, Zhi-Hai Zhang2** |
1Department of Physics, Guangxi Medical University, Nanning 530021 2School of Physics and Electronics, Yancheng Teachers University, Yancheng 224051
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Cite this article: |
Jian-Hui Yuan, Ni Chen, Hua Mo et al 2016 Chin. Phys. Lett. 33 037302 |
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Abstract We investigate the tunneling magnetoresistance via $\delta$ doping in a graphene-based magnetic tunnel junction in detail. It is found that the transmission probability and the conductance oscillates with the position and the aptitude of the $\delta$ doping. Also, both the transmission probability and the conductance at the parallel configuration are suppressed by the magnetic field more obviously than that at the antiparallel configuration, which implies a large negative magnetoresistance for this device. The results show that the negative magnetoresistance of over 300% at $B=1.0$ T is observed by choosing suitable doped parameters, and the temperature plays an important role in the magnetoresistance. Thus it is possible to open a way to effectively manipulate the magnetoresistance devices, and to make a type of magnetoresistance device by controlling the structural parameter of the $\delta$ doping.
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Received: 23 October 2015
Published: 31 March 2016
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PACS: |
73.23.-b
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(Electronic transport in mesoscopic systems)
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03.65.Pm
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(Relativistic wave equations)
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73.43.Cd
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(Theory and modeling)
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75.70.Ak
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(Magnetic properties of monolayers and thin films)
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