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Optical-Electrical Characteristics and Carrier Dynamics of Semi-Insulation GaAs by Terahertz Spectroscopic Technique |
| Xiao-Wei Han1,2, Lei Hou1**, Lei Yang1, Zhi-Quan Wang1, Meng-Meng Zhao1, Wei Shi1** |
1Department of Applied Physics, Xi'an University of Technology, Xi'an 710048
2Institute of Physical and Electrical Engineering, Weinan Normal University, Weinan 714000
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| Cite this article: |
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Xiao-Wei Han, Lei Hou, Lei Yang et al 2016 Chin. Phys. Lett. 33 120701 |
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Abstract GaAs has been widely used to fabricate a variety of optoelectronic devices by virtue of its superior performance, and it is very important to accurately measure its electrical and optical properties. In this study, a semi-insulation (SI) GaAs wafer is investigated by the terahertz (THz) non-destructive testing technology. Using an air biased coherent generation and detection THz time domain spectroscopy system, the THz time domain waveform and spectrum of SI-GaAs are obtained by the time domain spectroscopy module, and its optical-electrical characteristics including complex refractive index, permittivity and dielectric loss angle are calculated. Its carrier lifetime is measured by the optical-pump THz-probe module, and the THz pulse induced intervalley scattering in photo-excited SI-GaAs is discussed.
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Received: 13 August 2016
Published: 29 December 2016
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| PACS: |
07.57.Ty
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(Infrared spectrometers, auxiliary equipment, and techniques)
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78.20.Ci
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(Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))
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78.30.Fs
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(III-V and II-VI semiconductors)
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| Fund: Supported by the National Natural Science Foundation of China under Grant Nos 61575161 and 61427814, the National Basic Research Program of China under Grant No 2014CB339800, the Foundation of Shaanxi Key Science and Technology Innovation Team under Grant No 2014KTC-13, and the Special Financial Grant from the China Postdoctoral Science Foundation under Grant No 2013T60883. |
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