| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Effect of Back Diffusion of Mg Dopants on Optoelectronic Properties of InGaN-Based Green Light-Emitting Diodes |
| Ning Zhang1**, Xue-Cheng Wei1, Kun-Yi Lu2, Liang-Sen Feng1, Jie Yang1, Bin Xue1, Zhe Liu1, Jin-Min Li1, Jun-Xi Wang1** |
1Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, Beijing 100083
2Electronic Information School, Wuhan University, Wuhan 430072
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| Cite this article: |
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Ning Zhang, Xue-Cheng Wei, Kun-Yi Lu et al 2016 Chin. Phys. Lett. 33 117302 |
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Abstract The effect of back-diffusion of Mg dopants on optoelectronic characteristics of InGaN-based green light-emitting diodes (LEDs) is investigated. The LEDs with less Mg back-diffusion show blue shifts of longer wavelengths and larger wavelengths with the increasing current, which results from the Mg-dopant-related polarization screening. The LEDs show enhanced efficiency with the decreasing Mg back-diffusion in the lower current region. Light outputs follow the power law $L\propto I^{m}$, with smaller parameter $m$ in the LEDs with less Mg back-diffusion, indicating a lower density of trap states. The trap-assisted tunneling current is also suppressed by reducing Mg-defect-related nonradiative centers in the active region. Furthermore, the forward current–voltage characteristics are improved.
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Received: 21 August 2016
Published: 28 November 2016
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| Fund: Supported by the National Natural Science Foundation of China under Grant Nos 61505197 and 61334009, and the National High-Technology Research and Development Program of China under Grant No 2014AA032604. |
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