| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Tuning of the Electron Spin Relaxation Anisotropy via Optical Gating in GaAs/AlGaAs Quantum Wells |
| Bing-Hui Niu, Teng-Fei Yan, Hai-Qiao Ni, Zhi-Chuan Niu, Xin-Hui Zhang** |
State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
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| Cite this article: |
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Bing-Hui Niu, Teng-Fei Yan, Hai-Qiao Ni et al 2016 Chin. Phys. Lett. 33 107802 |
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Abstract The carrier-density-dependent spin relaxation dynamics for modulation-doped GaAs/Al$_{0.3}$Ga$_{0.7}$As quantum wells is studied using the time-resolved magneto-Kerr rotation measurements. The electron spin relaxation time and its in-plane anisotropy are studied as a function of the optically injected electron density. Moreover, the relative strength of the Rashba and the Dresselhaus spin–orbit coupling fields, and thus the observed spin relaxation time anisotropy, is further tuned by the additional excitation of a 532 nm continuous wave laser, demonstrating an effective spin relaxation manipulation via an optical gating method.
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Received: 13 July 2016
Published: 27 October 2016
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| Fund: Supported by the National Natural Science Foundation Program of China under Grant Nos 11274302, 11474276 and 61290303. |
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