| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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The Model for Linear Magnetoresistance of Two-Dimensional Metal-Semiconductor Composites with Interfacial Shells |
| XU Jie1,2**, WANG Guo-Dong3, LI Shan-Dong1,4, LI Qiang1, GAO Xiao-Yang1 |
1College of Physics, Qingdao University, Qingdao 266071
2College of Chemica, Science and Engineering, Qingdao University, Qingdao 266071
3College of Information Engineering, Qingdao University, Qingdao 266071
4Laboratory of Fiber Materials and Modern Textile, Growing Base for State Key Laboratory, Qingdao University, Qingdao 266071
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| Cite this article: |
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XU Jie, WANG Guo-Dong, LI Shan-Dong et al 2015 Chin. Phys. Lett. 32 097501 |
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Abstract A metal-semiconductor composite with the interfacial shells is investigated theoretically for the large linear magnetoresistance effect of high doping Ag2+δSe and Ag2+δTe materials. The magnetoresistance (MR) of composites is a function of the magnetic field, temperature, the conductivities of two phases without magnetic field, and the thickness and conductivity of the interfacial shells. The MR increases with the increase of the magnetic field and with the decrease of temperature, and no saturation is found even under the high magnetic field. Moreover, it is interestingly found that the interfacial shell is an important factor for the MR of the composites. The MR increases with the thickness and the conductivity of the interfacial shells. Lastly, the theoretical results on the MR are compared with the experimental data. It is found that the value of the MR of the composite with the interfacial shell is larger than that without the interfacial shell.
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Received: 17 April 2015
Published: 02 October 2015
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| PACS: |
75.47.Pq
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(Other materials)
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72.20.My
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(Galvanomagnetic and other magnetotransport effects)
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72.80.Ng
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(Disordered solids)
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