| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Large Tunability of Physical Properties of Manganite Thin Films by Epitaxial Strain |
| WEI Wen-Gang1,2, WANG Hui1, ZHANG Kai1, LIU Hao1, KOU Yun-Fang1, CHEN Jin-Jie1, DU Kai1, ZHU Yin-Yan1, HOU Deng-Lu2, WU Ru-Qian1, YIN Li-Feng1,3**, SHEN Jian1,3** |
1State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433
2College of Physics Science and Information Engineering, Hebei Normal University, Shijiazhuang 050024
3Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093
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| Cite this article: |
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WEI Wen-Gang, WANG Hui, ZHANG Kai et al 2015 Chin. Phys. Lett. 32 087504 |
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Abstract Physical properties of strongly correlated manganites are known to depend sensitively on lattice parameters. We show that in thin film form, the magnetic and transport properties of manganites can be tuned in a wide range using epitaxial strain. Specifically, by systematically varying the strain from negative to positive, we have observed 65%, ?33%, 650%, and ?17% changes for the saturation magnetization field Hs, saturation magnetization Ms, resistivity, and metal-insulator transition temperature. We explain these results with density functional theory calculations.
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Received: 27 March 2015
Published: 02 September 2015
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| PACS: |
75.47.Lx
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(Magnetic oxides)
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75.30.Gw
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(Magnetic anisotropy)
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75.70.-i
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(Magnetic properties of thin films, surfaces, and interfaces)
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[1] Tokura Y and Tomioka Y 1999 J. Magn. Magn. Mater. 200 1
[2] Guo H W et al 2013 Nano Lett. 13 3749
[3] Sheng Z G, Gao J and Sun Y P 2009 Phys. Rev. B 79 014433
[4] Asamitsu A, Tomioka Y, Kuwahara H and Tokura Y 1997 Nature 388 50
[5] Sheng Z G, Gao J and Sun Y P 2009 Phys. Rev. B 79 174437
[6] Wang S Y and Gao J 2012 Europhys. Lett. 97 57009
[7] Ward T Z et al 2009 Nat. Phys. 5 885
[8] Lu C J, Wang Z L, Kwon C and Jia Q X 2000 J. Appl. Phys. 88 4032
[9] Sacchetti A, Corridoni T, Arcangeletti E and Postorino P 2008 Eur. Phys. J. B 66 301
[10] Sheng Z G et al 2006 Appl. Phys. Lett. 89 082503
[11] Dai J M et al 2003 Phys. Rev. B 67 144405
[12] Gao G Y, Jin S W and Wu W B 2007 Appl. Phys. Lett. 90 012509
[13] Rao R A et al 1999 J. Appl. Phys. 85 4794
[14] Gommert E, Cerva H, Wecker J and Samwer K 1999 J. Appl. Phys. 85 5417
[15] Helali S E et al 2012 Appl. Phys. A 108 379
[16] Du K et al 2015 Nat. Commun. 6 6179
[17] Adamo C et al 2009 Appl. Phys. Lett. 95 112504
[18] Fehringer G, Janes S, Wildersohn M and Clasen R 2004 J. Eur. Ceram. Soc. 24 705
[19] Kresse G and Furthmuller J 1996 Phys. Rev. B 54 11169
[20] Perdew J P, Burke K and Ernzerhof M 1996 Phys. Rev. Lett. 77 3865
[21] Kresse G and Joubert D 1999 Phys. Rev. B 59 1758
[22] Liechtenstein A I, Anisimov V I and Zaanen J 1995 Phys. Rev. B 52 R5467
[23] Chikamatsu A et al 2006 Phys. Rev. B 73 195105
[24] Satpathy S, Popovic Z S and Vukajlovic F R 1996 Phys. Rev. Lett. 76 960
[25] Wessely O et al 2003 Phys. Rev. B 68 235109
[26] Monkhorst H J and Pack J D 1976 Phys. Rev. B 13 5188
[27] Jahn H A and Teller E 1937 Proc. R. Soc. London A 161 220
[28] Granado E et al 1998 Phys. Rev. B 58 11435
[29] Yeh N et al 1997 J. Phys.: Condens. Matter 9 3713
[30] Wang X D, Wu R Q, Wang D S and Freeman A J 1996 Phys. Rev. B 54 61
[31] Dho J and Hur N H 2007 J. Magn. Magn. Mater. 318 23
[32] van Vleck J H 1937 Phys. Rev. 52 1178
[33] Wang D S, Wu R Q and Freeman A J 1993 Phys. Rev. B 47 14932 |
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