| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Defect Reduction in GaAs/Si Films with the a-Si Buffer Layer Grown by Metalorganic Chemical Vapor Deposition |
| WANG Jun**, HU Hai-Yang, HE Yun-Rui, DENG Can, WANG Qi, DUAN Xiao-Feng, HUANG Yong-Qing, REN Xiao-Min |
Institute of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications; State Key Laboratory of Information Photonics and Optical Communications, Beijing 100876
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| Cite this article: |
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WANG Jun, HU Hai-Yang, HE Yun-Rui et al 2015 Chin. Phys. Lett. 32 088101 |
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Abstract The growth of GaAs epilayers on silicon substrates with a thin amorphous silicon (a-Si) buffer layer by metalorganic chemical vapor deposition is investigated in detail. Combining with the two-step growth method, the growth conditions of the a-Si buffer layer are optimized for growth of high-quality GaAs/Si epilayers. The a-Si buffer layer exhibits the best effect with thickness of 1.8 nm and growth temperature of 620°C. It is found that the introduction of this a-Si layer on Si substrates effectively reduces the dislocation density in GaAs/Si films. As compared with the dislocation density of 5×107 cm?2 in the GaAs/Si sample without the a-Si layer, a density of 3×105 cm?2 is achieved in the sample with the a-Si layer, and the defect reduction mechanism is discussed in detail.
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Received: 19 January 2015
Published: 02 September 2015
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| PACS: |
81.05.Ea
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(III-V semiconductors)
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81.10.Bk
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(Growth from vapor)
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81.15.-z
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(Methods of deposition of films and coatings; film growth and epitaxy)
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61.72.Lk
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(Linear defects: dislocations, disclinations)
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