CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Defect Reduction in GaAs/Si Films with the a-Si Buffer Layer Grown by Metalorganic Chemical Vapor Deposition |
WANG Jun**, HU Hai-Yang, HE Yun-Rui, DENG Can, WANG Qi, DUAN Xiao-Feng, HUANG Yong-Qing, REN Xiao-Min |
Institute of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications; State Key Laboratory of Information Photonics and Optical Communications, Beijing 100876
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Cite this article: |
WANG Jun, HU Hai-Yang, HE Yun-Rui et al 2015 Chin. Phys. Lett. 32 088101 |
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Abstract The growth of GaAs epilayers on silicon substrates with a thin amorphous silicon (a-Si) buffer layer by metalorganic chemical vapor deposition is investigated in detail. Combining with the two-step growth method, the growth conditions of the a-Si buffer layer are optimized for growth of high-quality GaAs/Si epilayers. The a-Si buffer layer exhibits the best effect with thickness of 1.8 nm and growth temperature of 620°C. It is found that the introduction of this a-Si layer on Si substrates effectively reduces the dislocation density in GaAs/Si films. As compared with the dislocation density of 5×107 cm?2 in the GaAs/Si sample without the a-Si layer, a density of 3×105 cm?2 is achieved in the sample with the a-Si layer, and the defect reduction mechanism is discussed in detail.
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Received: 19 January 2015
Published: 02 September 2015
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PACS: |
81.05.Ea
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(III-V semiconductors)
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81.10.Bk
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(Growth from vapor)
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81.15.-z
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(Methods of deposition of films and coatings; film growth and epitaxy)
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61.72.Lk
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(Linear defects: dislocations, disclinations)
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[1] Won R and Paniccia M 2010 Nat. Photon. 4 498 [2] Jalali B and Fathpour S 2006 J. Lightwave Technol. 24 4600 [3] Zhou X J, Tang C W, Li Q and Lau K M 2012 Phys. Status Solidi A 209 1380 [4] Shi Y B et al 2012 Materials 5 2917 [5] Li J, Guo H, Liu J, Tang J, Ni H Q, Shi Y B, Xue C Y, Niu Z C, Zhang W D, Li M F and Yu Y 2013 Nanoscale Res. Lett. 8 218 [6] Ma K, Urata R, David A M and James S H 2004 IEEE J. Quantum Electron. 40 800 [7] Chen R, Tran T, Ng K, Ko W S, Chuang L, Sedgwick F and Chang C 2011 Nat. Photon. 5 170 [8] Liang D and Bowers J 2010 Nat. Photon. 4 511 [9] Han L S, Zhu H L, Zhang C, Ma L, Liang S and Wang W 2013 Chin. Phys. Lett. 30 108501 [10] Liu H, Wang T, Jiang Q, Hogg R, Tutu F, Pozzi F and Seeds A 2011 Nat. Photon. 5 416 [11] Michel J, Liu J and Kimerling L C 2010 Nat. Photon. 4 527 [12] Bolkhovityanov Y B and Pchelyakov O P 2008 Sov. Phys. Usp. 51 437 [13] Linder K K, Phillips J, Qasaimeh O, Liu X F, Krishna S and Bhattacharya P 1999 Appl. Phys. Lett. 74 1355 [14] Huang H, Ren X M, Lv J H, Wang Q, Song H L, Cai S W, Huang Y Q and Qu B 2008 J. Appl. Phys. 104 113114 [15] Wang J, Deng C, Jia Z G, Wang Y F, Wang Q, Huang Y Q and Ren X M 2013 Chin. Phys. Lett. 30 116801 [16] Wang Y F, Wang Q, Jia Z G, Li X Y, Deng C, Ren X M, Cai S W and Huang Y Q 2013 J. Vac. Sci. Technol. B 31 051211 [17] Lee S C, Dawson L R, Huang S H and Brueck S R J 2011 Cryst. Growth Des. 11 3673 [18] Cheng S F, Gao L, Woo R L, Pangan A, Malouf G, Goorsky M S, Wang K L and Hicks R F 2008 J. Cryst. Growth 310 562 [19] Kataria H, Metaferia W, Junesand C, Zhang C, Julian N, Bowers J and Lourdudoss S 2014 IEEE J. Sel. Top. Quantum Electron. 20 8201407 [20] Kazi Z I, Egawa T, Jimbo T and Umeno M 1999 IEEE Photon. Technol. Lett. 11 1563 [21] Lee S C and Brueck S R J 2009 Appl. Phys. Lett. 94 153110 [22] Stringfellow G B 1999 Organometallic Vaporphase Epitaxy: Theory and Practice (San Diego: Academic Press) [23] Ismail K, Legoues F, Karam N H, Carter J and Smith H I 1991 Appl. Phys. Lett. 59 2418 [24] Uen Y W, Li Z Y, Lan S M, Yang T N and Shin H Y 2006 Semicond. Sci. Technol. 21 852 [25] Uen Y W, Li Z Y, Huang Y C, Chen M C, Yang T N, Lan S M, Wu C H, Hong H F and Chi G C 2006 J. Cryst. Growth 295 103 [26] Hao M S, Liang J W, Zheng L X, Deng L, Xiao Z and Hu X 1995 Jpn. J. Appl. Phys. 34 L900 [27] Hao M S, Liang J W, Jin X J, Wang Y T, Deng L S, Xiao Z B, Zheng L X and Hu X W 1996 Chin. Phys. Lett. 13 42 |
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