| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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A Novel Multi-Finger Gate Structure of AlGaN/GaN High Electron Mobility Transistor |
| CUI Lei1, WANG Quan1,2, WANG Xiao-Liang1,3**, XIAO Hong-Ling1, WANG Cui-Mei1, JIANG Li-Juan1, FENG Chun1, YIN Hai-Bo1, GONG Jia-Min2, LI Bai-Quan4, WANG Zhan-Guo3 |
1Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an 710121
3Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083
4Beijing Huajin Chuangwei Technology Co., Ltd., Beijing 100036
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| Cite this article: |
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CUI Lei, WANG Quan, WANG Xiao-Liang et al 2015 Chin. Phys. Lett. 32 058501 |
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Abstract A novel multi-finger gate high electron mobility transistor (HEMT) is designed to reduce the peak electric field value at the drain-side gate edge when the device is at off-state. The effective gate length (Leff) of the multi-finger gate device is smaller than that of the field plate gate device. In this work, field plate gate, five-finger gate and ten-finger gate devices are simulated. The results of the simulation indicate that the multi-finger gate device has a lower peak value than the device with the gate field plate. Moreover, this value would be further reduced when the number of gate fingers is increased. In addition, it has the potential to make the HEMT work in a higher frequency since it has a lower effective length of gate.
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Received: 10 December 2014
Published: 01 June 2015
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| PACS: |
85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.30.Tv
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(Field effect devices)
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81.05.Ea
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(III-V semiconductors)
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