| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
|
|
|
|
The near-Surface Region of Cubic Boron Nitride Single Crystal from the Li3N-hBN System |
| GUO Xiao-Fei1,2, XU Bin2**, WEN Zhen-Xing2, FAN Xiao-Hong2, TIAN Bin2 |
1School of Materials Science and Engineering, Shandong University, Jinan 250061
2School of Materials Science and Engineering, Shandong Jianzhu University, Jinan 250101
|
|
| Cite this article: |
|
GUO Xiao-Fei, XU Bin, WEN Zhen-Xing et al 2014 Chin. Phys. Lett. 31 048101 |
|
|
|
|
Abstract Cubic boron nitride single crystals are synthesized with lithium nitride as a catalyst under high pressure and high temperature. The main phases in the near-surface region, which around the single crystal are determined as a mixture of hexagonal boron nitride (hBN), cubic boron nitride (cBN) and lithium boron nitride (Li3BN2). High resolution transmission electron microscopy examinations show that there exist lots of nanometer-sized cubic boron nitride nuclei in this region. The interface phase structures of cubic boron nitride crystal and its near-surface region are investigated by means of transmission electron microscopy. The growth mechanism of cubic boron nitride crystal is analyzed briefly. It is supposed that Li3BN2 impels the direct conversion of hBN to cBN as a real catalyst, and cBN is homogeneously nucleated in the molten state under high pressure and high temperature.
|
|
|
Received: 15 November 2013
Published: 25 March 2014
|
|
| PACS: |
81.10.-h
|
(Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)
|
| |
68.37.Lp
|
(Transmission electron microscopy (TEM))
|
| |
81.16.Hc
|
(Catalytic methods)
|
|
|
|
|
|
[1] Mallika K, DeVries R C and Komanduri R 1999 Thin Solid Films 339 19
[2] Solozhenko V L, Vladimir Z and Turkevich 1997 Mater. Lett. 32 179
[3] Mosuang T E and Lowther J E 2002 J. Phys. Chem. Solids 63 363
[4] Bhaskar P, Chattopadhyay A K and Chattopadhyay A B 2010 Int. J. Adv. Manuf. Tech. 48 935
[5] Wentorf R H 1962 J. Chem. Phys. 36 1990
[6] Mishima O, Era K, Tanaka J and Yamaoka S 1988 Appl. Phys. Lett. 53 962
[7] Lian G, Zhang X, Zhu L L, Tan M, Cui D L and Wang Q L 2011 Res. Chem. Intermed. 37 369
[8] Kuhr M, Reinke S and Kulisch W 1995 Diamond Relat. Mater. 4 375
[9] Fukunaga O, Takeuchi S and Taniguchi T 2011 Diamond Relat. Mater. 20 752
[10] Bocquillon G, Loriers-susse C and Loriers J 1993 J. Mater. Sci. 28 3547
[11] Devries R C and Fleischer J F 1972 J. Cryst. Growth 13-14 88
[12] Yin L W, Li M S, Hao Z Y and Wang Y X 2002 Chem. Phys. Lett. 360 167
[13] Li S, Guo X F, Xu B and Wang H 2012 J. Synth. Cryst. 41 15 (in Chinese)
[14] Fan X H, Xu B, Niu Z, Zhai T G and Tian B 2012 Chin. Phys. Lett. 29 048102
[15] Caveney R J 1992 Mater. Sci. Eng. B 11 197
[16] Xu B, Cui J J, Li M S, Li C M, Chu F M and Feng L M 2005 Chin. Phys. Lett. 22 478
[17] Devries R C and Fleischer J F 1969 Mater. Res. Bull. 4 433
[18] Kagamida M and Ka S 1989 J. Cryst. Growth 94 261 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
