Chin. Phys. Lett.  2014, Vol. 31 Issue (04): 048102    DOI: 10.1088/0256-307X/31/4/048102
CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Direct Laser Writing Facility for Fabrication of Submicron Mask
ZHU Feng, MA Jian-Yong**
Information Optics Laboratory, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800
Cite this article:   
ZHU Feng, MA Jian-Yong 2014 Chin. Phys. Lett. 31 048102
Download: PDF(521KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract Direct laser writing technique has become a well-established, multi-functional and flexible method for fabricating high quality diffractive optical elements. We propose and build a maskless direct laser writing system with the ability to produce a sub-micron feature size. The high precision lithography is realized by using the astigmatic autofocus method. The minimum feature size of the system, breaking through the diffraction limit with the chromium layer, can achieve 300 nm with the 405 nm blue laser. A 50×50 mm2 chromium grating mask with a period of 1 μm and line width of 300 nm is fabricated. This facility will be useful for the fabrication of large-scale submicron diffraction optical elements in the future.
Received: 03 December 2013      Published: 25 March 2014
PACS:  81.16.Mk (Laser-assisted deposition)  
  81.16.Nd (Micro- and nanolithography)  
  42.50.St (Nonclassical interferometry, subwavelength lithography)  
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/10.1088/0256-307X/31/4/048102       OR      https://cpl.iphy.ac.cn/Y2014/V31/I04/048102
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
ZHU Feng
MA Jian-Yong
[1] Kaschlik K 1991 Solid State Technol. 34 117
[2] Gale M T, Rossi M, Pedersen J and Schültz H 1994 Opt. Eng. 33 3556
[3] Smuk Y and Lawandy N M 1997 CLEO'97 177
[4] Yu B, Jia W, Zhou C H, Cao H C and Sun W T 2013 Chin. Opt. Lett. 11 080501
[5] Chan Y C, Lam Y L, Zhou Y, Xu F L, Liaw C Y, Jiang W and Ahn J 1998 Opt. Eng. 37 2521
[6] Reimer K, Henke W, Quenzer H J, Pilz W and Wagner B 1996 Microelectron. Eng. 30 559
[7] Shank S, Skvaria M, Chen F R, Craighead H C, Cook P, Bussjager R, Haas F and Honey D A 1994 OSA Tech. Dig. Ser. Diffractive Opt. 11 302
[8] Fu Y and Ngoi B K A 2000 Opt. Eng. 39 3008
[9] Behrmann G P and Duignan M T 1997 Appl. Opt. 36 4666
[10] Wang X, Leger J R and Rediker R H 1997 Appl. Opt. 36 4660
[11] Wei J S, Liu J and Jiao X B 2009 Appl. Phys. Lett. 95 241105
[12] Fan Y T, Xu W D, Chen L, Liu Q and Guo C F 2009 Proc. SPIE 7125 712522
[13] Salgueiro J R, Roman J F and Moreno V 1998 Opt. Eng. 37 1115
[14] Marshall G D, Dekker P, Ams M, Piper J A and Withford M J 2008 Opt. Lett. 33 956
[15] Fischer J and Wegener M 2011 Opt. Mater. Express 1 614
[16] Wang T S, Yu W X, Zhang D Y, Li C R, Zhang H X, Xu W B, Xu Z J, Liu H, Sun Q and Lu Z W 2010 Opt. Express 18 25102
[17] Tian F, Yang G G, Bai J, Xu J F, Hou C L, Liang Y Y and Wang K W 2009 Opt. Express 17 19960
[18] Haefner M, Pruss C and Osten W 2011 Appl. Opt. 50 5983
[19] Sun X H, Zhou C H, Ru H Y, Zhang Y Y and Yu B K 2004 Chin. Opt. Lett. 2 4
[20] Staude I, Freymann G V, Essig S, Busch K and Wegener M 2011 Opt. Lett. 36 67
[21] Liu C H and Li Z H 2008 Appl. Opt. 47 3968
Related articles from Frontiers Journals
[1] CEN Zhan-Hong, XU Jun, LIU Yan-Song, HAN Pei-Gao, LI Wei, HUANG Xin-Fan, CHEN Kun-Ji. Preparation of a Single Layer of Luminescent Nanocrystalline Si Structures by Laser Irradiation Method[J]. Chin. Phys. Lett., 2006, 23(4): 048102
Viewed
Full text


Abstract