| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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AlGaN/GaN HEMTs on 4-Inch Silicon Substrates in the Presence of 2.7-µm -Thick Epilayers with the Maximum Off-State Breakdown Voltage of 500 V |
| YU Xin-Xin, NI Jin-Yu, LI Zhong-Hui**, KONG Cen, ZHOU Jian-Jun, DONG Xun, PAN Lei, KONG Yue-Chan, CHEN Tang-Sheng |
| Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016 |
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| Cite this article: |
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YU Xin-Xin, NI Jin-Yu, LI Zhong-Hui et al 2014 Chin. Phys. Lett. 31 037201 |
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Abstract We report on the high breakdown performance of AlGaN/GaN high electron mobility transistors (HEMTs) grown on 4-inch silicon substrates. The HEMT structure including three Al-content step-graded AlGaN transition layers has a total thickness of 2.7 μm. The HEMT with a gate width WG of 300 μm acquires a maximum off-state breakdown voltage (BV) of 550 V and a maximum drain current of 527 mA/mm at a gate voltage of 2 V. It is found that BV is improved with the increase of gate-drain distance LGD until it exceeds 8 μm and then BV is tended to saturation. While the maximum drain current drops continuously with the increase of LGD. The HEMT with a WG of 3 mm and a LGD of 8 μm obtains an off-state BV of 500 V. Its maximum leakage current is just 13 μA when the drain voltage is below 400 V. The device exhibits a maximum output current of 1 A with a maximum transconductance of 242 mS.
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Received: 16 December 2013
Published: 28 February 2014
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| PACS: |
72.80.Ey
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(III-V and II-VI semiconductors)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.30.Tv
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(Field effect devices)
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