| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Effects of Oxygen Vacancy on Optical and Electrical Properties of ZnO Bulks and Nanowires |
| YU Xiao-Xia1, ZHENG Hong-Mei1, FANG Xiao-Yong1**, JIN Hai-Bo2, CAO Mao-Sheng2** |
1School of Science, Yanshan University, Qinhuangdao 066004
2School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081
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| Cite this article: |
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YU Xiao-Xia, ZHENG Hong-Mei, FANG Xiao-Yong et al 2014 Chin. Phys. Lett. 31 117301 |
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Abstract Based on the generalized gradient approximation (GGA) in density functional theory (DFT) and using the first-principle plane wave ultrasoft pseudopotential method, we construct and optimize the structures of intrinsic and oxygen vacancy (VO) ZnO bulks and nanowires (NWs) in the Castep module. Moreover, the calculation of band structures and the optical properties are carried out. The calculated results exhibit that the oxygen vacancy exerts a more significant influence on the electronic structures of the ZnO bulks instead of the NWs. What is more, the influences of the VO on the optical properties are mainly embodied in the ultraviolet region, and the main optical parameters of ZnO bulks and NWs with VO are anisotropic.
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Published: 28 November 2014
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| PACS: |
73.61.Ga
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(II-VI semiconductors)
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78.20.Ci
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(Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))
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78.67.-n
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(Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)
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