| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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High-Power Nd:GdVO4 Innoslab Continuous-Wave Laser under Direct 880 nm Pumping |
| DENG Bo1, ZHANG Heng-Li1**, XU Liu1, MAO Ye-Fei1, HE Jing-Liang2, XIN Jian-Guo1 |
1School of Optoelectronics, Beijing Institute of Technology, Beijing 100081
2State Key Laboratory of Crystal Materials, Shandong University, Jinan 250000
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| Cite this article: |
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DENG Bo, ZHANG Heng-Li, XU Liu et al 2014 Chin. Phys. Lett. 31 114201 |
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Abstract A high-power cw end-pumped laser device is demonstrated with a slab crystal of Nd:GdVO4 operating at 1063 nm. Diode laser stacks at 880 nm are used to pump Nd:GdVO4 into emitting level 4F3/2. The 149 W output power is presented when the absorbed pump power is 390 W and the optical-to-optical conversion efficiency is 38.2%. When the output power is 120 W, the M2 factors are 2.3 in both directions. Additionally, mode overlap inside the resonator is analyzed to explain the beam quality deterioration.
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Published: 28 November 2014
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| PACS: |
42.55.Rz
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(Doped-insulator lasers and other solid state lasers)
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42.55.Xi
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(Diode-pumped lasers)
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42.60.Pk
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(Continuous operation)
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