| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Stress Distribution in GaN Films grown on Patterned Si (111) Substrates and Its Effect on LED Performance |
| CHEN Dan-Yang, WANG Li**, XIONG Chuan-Bing, ZHENG Chang-Da, MO Chun-Lan, JIANG Feng-Yi |
National Engineering Research Center for LED on Si Substrate, Nanchang University, Nanchang 330047
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| Cite this article: |
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CHEN Dan-Yang, WANG Li, XIONG Chuan-Bing et al 2013 Chin. Phys. Lett. 30 098101 |
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Abstract Crack free GaN films were grown on 1200×1200 μm2 patterned Si (111) substrates and 36 light emitting diodes (LEDs) were fabricated in each pattern unit. Spatial distribution of the tensile stress in the pattern units and its influence on the LED performance are studied by micro-Raman and electroluminescence (EL). The Raman shift of the GaN E2 mode shows that the tensile stress is the maximum at the center, partially relaxed at the edge, and further relaxed at the corner. With the stress relaxation, the EL wavelength has a significant blue shift and the luminous intensity shows a great enhancement.
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Received: 26 April 2013
Published: 21 November 2013
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| PACS: |
81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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81.05.Ea
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(III-V semiconductors)
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71.20.Nr
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(Semiconductor compounds)
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78.55.Cr
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(III-V semiconductors)
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