| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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A Low Specific on-Resistance SOI Trench MOSFET with a Non-Depleted Embedded p-Island |
| FAN Jie**, ZHANG Bo, LUO Xiao-Rong, LI Zhao-Ji |
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054
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| Cite this article: |
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FAN Jie, ZHANG Bo, LUO Xiao-Rong et al 2013 Chin. Phys. Lett. 30 078501 |
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Abstract A novel silicon-on-insulator (SOI) trench metal-oxide-semiconductor field effect transistor (MOSFET) with a reduced specific on-resistance (Ron, sp) is presented. It features an oxide-filled trench and a non-depleted embedded p-type island (p-SOI). The oxide trench folds the drift region into a U-shape, resulting in a reduction in cell pitch and Ron, sp. The non-depleted p-island is employed to further reduce Ron, sp by increasing the optimized doping concentration of the drift region without deteriorating the breakdown voltage (BV). The simulation results show that the p-SOI decreases the Ron, sp to 10.2 mΩ?cm2 from 17.4 mΩ?cm2 of the conventional SOI MOSFET at the same BV.
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Received: 06 February 2013
Published: 21 November 2013
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| PACS: |
85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.30.Tv
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(Field effect devices)
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84.70.+p
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(High-current and high-voltage technology: power systems; power transmission lines and cables)
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