CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
|
|
|
|
Stable Organic Field Effect Transistors with Low-Cost MoO3/Al Source-Drain Electrodes |
ZHANG Hui1,2, MI Bao-Xiu1,2, LI Xin1,2, GAO Zhi-Qiang1**, ZHAO Lu1,2, HUANG Wei2 |
1Jiangsu Engineering Centre for Flat-Panel Displays and Solid-state Lighting and College of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210046 2Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210046
|
|
Cite this article: |
ZHANG Hui, MI Bao-Xiu, LI Xin et al 2013 Chin. Phys. Lett. 30 028501 |
|
|
Abstract Stable organic field effect transistors (OFETs) based on copper phthalocyanine (CuPc) are reported using MoO3/Al as source-drain top contacts. By annealing the fabricated device at 130°C in air, the mobility and the stability of the OFETs can be significantly improved in comparison with the untreated device. The heat-treated devices without encapsulation show a device storage stability of nearly 400 h while the untreated one only 183 h. This improvement is suggested to be mainly attributed to the reduction of the contact barrier between CuPc and the electrode, as well as the better alignment of CuPc molecules via post annealing.
|
|
Received: 24 September 2012
Published: 02 March 2013
|
|
PACS: |
85.30.Tv
|
(Field effect devices)
|
|
72.80.Le
|
(Polymers; organic compounds (including organic semiconductors))
|
|
|
|
|
[1] Sirringhaus H, Kawase T, Friend R H, Shimoda T, Inbasekaran M, Wu W and Woo E P 2000 Science 290 2123 [2] Crone B, Dodabalapur A, Lin Y Y, Filas R W, Bao Z, LaDuca A, Sarpeshkar R, Katz H E and Li W 2000 Nature 403 521 [3] Forrest S R 2004 Nature 428 911 [4] Yan H, Chen Z, Zheng Y, Newman C, Quinn J R, Dotz F, Kastler M and Facchetti A 2009 Nature 457 679 [5] Wang L P, Lu A X, Dou W and Wan Q 2010 Chin. Phys. Lett. 27 078502 [6] Yu S Y, Xu S A and Ma D G 2007 Chin. Phys. Lett. 24 3513 [7] An Z S, Yu J S, Jones S C, Barlow S, Yoo S H, Domercq B, Prins P, Siebbeles L D A, Kippelen B and Marder S R 2005 Adv. Mater. 17 2580 [8] Haddock J N, Zhang X H, Domercq B and Kippelen B 2005 Org. Electron. 6 182 [9] Lee J Y, Roth S and Park Y W 2006 Appl. Phys. Lett. 88 252106 [10] Takahashi T, Takenobu T, Takeya J and Iwasa Y 2006 Appl. Phys. Lett. 88 033505 [11] Zeis R, Siegrist T and Kloc Ch 2005 Appl. Phys. Lett. 86 022103 [12] Lee S, Kang S J, Jo G, Choe M, Park W, Yoon J, Kwon T, Kahng Y H, Kim D Y, Lee B H and Lee T 2011 Appl. Phys. Lett. 99 083306 [13] Chen W, Wang L, Qi D C, Chen S, Gao X Y and Wee A T S 2006 Appl. Phys. Lett. 88 184102 [14] Chu C W, Shrotriya V, Li G and Yang Y 2006 Appl. Phys. Lett. 88 153504 [15] Sarma R and Saikia D 2011 IEEE Electron Device Lett. 32 209 [16] Burrows P E and Forrest S R 1994 Appl. Phys. Lett. 64 2285 [17] Lin Y J, Li Y C, Wen T C, Huang L M, Chen Y K, Yeh H J and Wang Y H 2008 Appl. Phys. Lett. 93 043305 [18] Bai Y, Liu X, Chen L, Haq K, Khan M A, Zhu W Q, Jiang X Y and Zhang Z L 2007 Microelectron. J. 38 1185 [19] Jones B A, Facchetti A, Marks T J and Wasielewsk M R 2007 Chem. Mater. 19 11 [20] Rost H, Ficker J, Alonso J S, Leenders L and McCulloch I 2004 Synth. Met. 145 83 [21] Li Z G, Gao Z Q, Wang H S, Zhang H, Zhao X Y, Mi B X and Huang W 2012 Sci. Chin. Chem. 55 1 [22] Huang J, Hines D R, Jung B J, Bronsgeest M S, Tunnell A, Ballarotto V, Katz H E, Fuhrer M S, Williams E D and Cumings J 2011 Org. Electron. 12 1471 [23] 2008 IEEE Standard for Test Methods for the Characterization of Organic Transistors and Materials IEEE Std 1620TM -2008 [24] Rentenberger S, Vollmer A, Zojer E, Schennach R and Koch N 2006 J. Appl. Phys. 100 053701 [25] Bao Z, Lovinger A J and Dodabalapur A 1996 Appl. Phys. Lett. 69 3066 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|