| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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The Influence of Graded AlGaN Buffer Thickness for Crack-Free GaN on Si(111) Substrates by using MOCVD |
| XU Pei-Qiang, JIANG Yang**, MA Zi-Guang, DENG Zhen, LU Tai-Ping, DU Chun-Hua, FANG Yu-Tao, ZUO Peng, CHEN Hong |
Key Laboratory for Renewable Energy, Institute of Physics, Chinese Academy of Sciences, Beijing 100190
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XU Pei-Qiang, JIANG Yang, MA Zi-Guang et al 2013 Chin. Phys. Lett. 30 028101 |
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Abstract GaN films with different thicknesses of Al composition graded AlGaN buffer are grown on substrates of Si(111) by metal-organic chemical vapor deposition (MOCVD). The thicknesses of graded AlGaN buffer are fixed at 200 nm, 300 nm, and 450 nm, respectively. Optical microscopy, atomic force microscopy, x-ray diffraction, and Raman spectroscopy are employed to characterize these samples. We find that the thickness of the graded AlGaN buffer layer plays a key role on the following growth of GaN films. The optimized thickness of the graded AlGaN buffer layer is 300 nm. Under such conditions, the GaN epitaxial film is crack-free, and its dislocation density is the lowest.
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Received: 15 October 2012
Published: 02 March 2013
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| PACS: |
81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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81.05.Ea
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(III-V semiconductors)
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71.20.Nr
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(Semiconductor compounds)
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