| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Strained Germanium-Tin pMOSFET Fabricated on a Silicon-on-Insulator Substrate with Relaxed Ge Buffer |
| SU Shao-Jian1, HAN Gen-Quan2, ZHANG Dong-Liang3, ZHANG Guang-Ze3, XUE Chun-Lai3, WANG Qi-Ming3, CHENG Bu-Wen3** |
1College of Information Science and Engineering, Huaqiao University, Xiamen 361021
2Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044
3State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083
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| Cite this article: |
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SU Shao-Jian, HAN Gen-Quan, ZHANG Dong-Liang et al 2013 Chin. Phys. Lett. 30 118501 |
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Abstract Germanium-tin (Ge1?xSnx) p-type metal-oxide-semiconductor field effect transistors (pMOSFETs) were fabricated using a strained Ge0.985Sn0.015 thin film that was epitaxially grown on a silicon-on-insulator substrate with a relaxed Ge buffer layer. The Ge buffer was deposited using a two-step chemical vapor deposition growth technique. The high quality Ge0.985Sn0.015 layer was grown by solid source molecular beam epitaxy. Ge0.985Sn0.015 pMOSFETs with Si surface passivation, TaN/HfO2 gate stack, and nickel stanogermanide [Ni(Ge1?xSnx)] source/drain were fabricated on the grown substrate. The device achieves an effective hole mobility of 182 cm2/V?s at an inversion carrier density of 1×1013 cm?2.
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Received: 08 August 2013
Published: 30 November 2013
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| PACS: |
85.30.Tv
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(Field effect devices)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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81.15.Hi
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(Molecular, atomic, ion, and chemical beam epitaxy)
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